Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 1009-1014

  Kim, Yong Hoon ^a,b   Han, Min Koo ^b   Han, Jeong In ^a   Park, Sung Kyu ^c  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Seoul National University   (South Korea)

^c Chonbuk National University   (South Korea)

Author keywords

IGZO; Metallic composition; Solution process; Thin film transistor

Indexed keywords

AMORPHOUS STRUCTURES; COMBINATORIAL STUDIES; EFFICIENT CONTROL; ELECTRICAL PROPERTY; METALLIC COMPONENT; METALLIC COMPOSITION; MOLAR RATIO; ON/OFF CURRENT RATIO; SOLUTION PHASE; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE;

AMORPHOUS FILMS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; GALLIUM; GELS; INDIUM; METALLIC COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; SURFACE ROUGHNESS; ZINC;

THIN FILM TRANSISTORS;

EID: 77951623832     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2043179     Document Type: Article

References (28)

1. H. Q. Chiang, D. Hong, C. M. Hung, R. E. Presley, and J. F. Wager, "Zinc tin oxide thin-film transistors via reactive sputtering using a metal target, " J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 24, no. 5, pp. L23-L25, Sep. 2006.
2. H.-H. Hsieh and C.-C. Wu, "Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes, " Appl. Phys. Lett., vol. 91, no. 1, p. 013 502, Jul. 2007.
3. R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thinfilm transistors, " Appl. Phys. Lett., vol. 82, no. 5, pp. 733-735, Feb. 2003.
4. K. Sivaramakrishnan and T. L. Alford, "Metallic conductivity and the role of copper in ZnO/Cu/ZnO thin films for flexible electronics, " Appl. Phys. Lett., vol. 94, no. 5, p. 052 104, Feb. 2009.
5. A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications, " Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, Jul. 2000.
6. P. Ravirajan, A. M. Peiro, M. K. Nazeeruddin, M. Graetzel, D. D. C. Bradley, J. R. Durrant, and J. Nelson, "Hybrid polymer/zinc oxide photovoltaic devices with vertically oriented ZnO nanorods and an amphiphilic molecular interface layer, " J. Phys. Chem. B, vol. 110, no. 15, pp. 7635-7639, Apr. 2006.
7. W. J. E. Beek, M. M. Wienk, and R. A. J. Janssen, "Hybrid solar cells from regioregular polythiophene and ZnO nanoparticles, " Adv. Funct. Mater., vol. 16, no. 8, pp. 1112-1116, May 2006.
8. P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes, Jr., "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering, " Appl. Phys. Lett., vol. 82, no. 7, pp. 1117-1119, Feb. 2003.
9. E. M. C. Fortunato, P. M. C. Barquinha, A. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, "Fully transparent ZnO thin-film transistor produced at room temperature, " Adv. Mater., vol. 17, no. 5, pp. 590-594, Mar. 2005.
10. D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving, "Stable ZnO thin film transistors by fast open air atomic layer deposition, " Appl. Phys. Lett., vol. 92, no. 19, p. 192 101, May 2008.
11. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors, " Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
12. J. K. Jeong, H. W. Yang, J. H. Jeong, Y. Mo, and H. D. Kim, "Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors, " Appl. Phys. Lett., vol. 93, no. 12, p. 123 508, Sep. 2008.
13. P. Barquinha, A. Vila, G. Goncalves, L. Pereira, R. Martins, J. Morante, and E. Fortunato, "The role of source and drain material in the performance of GIZO based thin-film transistors, " Phys. Stat. Sol. (A), vol. 205, no. 8, pp. 1905-1909, Aug. 2008.
14. 2 thin films with indium mol ratios using solution process, " J. Electrochem. Soc., vol. 155, no. 11, pp. H848-H851, Sep. 2008.
15. 4 thin-film transistors, " Appl. Phys. Lett., vol. 92, no. 13, p. 133 512, Apr. 2008.
16. Y. L. Wang, F. Ren, W. Lim, D. P. Norton, S. J. Pearton, I. I. Kravchenko, and J. M. Zavada, "Room temperature deposited indium zinc oxide thin film transistors, " Appl. Phys. Lett., vol. 90, no. 23, p. 232 103, Jun. 2007.
17. 3-10wt% ZnO thin film transistors, " Appl. Phys. Lett., vol. 89, no. 6, p. 062 103, Aug. 2006.
18. S. K. Park, Y. H. Kim, H. S. Kim, and J. I. Han, "High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability, " Electrochem. Solid-State Lett., vol. 12, no. 7, pp. H256-H258, Apr. 2009.
19. Y. J. Chang, D. H. Lee, G. S. Herman, and C. H. Chang, "Highperformance, spin-coated zinc tin oxide thin-film transistors, " Electrochem. Solid-State Lett., vol. 10, no. 5, pp. H135-H138, Feb. 2007.
20. D. H. Lee, Y. J. Chang, G. S. Herman, and C. H. Chang, "A general route to printable high-mobility transparent amorphous oxide semiconductors, " Adv. Mater., vol. 19, no. 6, pp. 843-847, Mar. 2007.
21. H. Cheng, C. Chen, and C. Tsay, "Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method, " Appl. Phys. Lett., vol. 90, no. 1, p. 012 113, Jan. 2007.
22. B. S. Ong, C. S. Li, Y. N. Li, Y. L. Wu, and R. O. Loutfy, "Stable, solutionprocessed, high-mobility ZnO thin-film transistors, " J. Amer. Chem. Soc., vol. 129, no. 10, pp. 2750-2751, Feb. 2007.
23. H. S. Kim, P. D. Byrne, A. Facchetti, and T. J. Marks, "High performance solution-processed indium oxide thin-film transistors, " J. Amer. Chem. Soc., vol. 130, no. 38, pp. 12580-12581, Aug. 2008.
24. C. S. Li, Y. N. Li, Y. L. Wu, B. S. Ong, and R. O. Loutfy, "Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors, " J. Mater. Chem., vol. 19, no. 11, pp. 1626-1634, 2009.
25. M. G. McDowell, R. J. Sanderson, and I. G. Hill, "Combinatorial study of zinc tin oxide thin-film transistors, " Appl. Phys. Lett., vol. 92, no. 1, p. 013 502, Jan. 2008.
26. T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system, " Appl. Phys. Lett., vol. 90, no. 24, p. 242 114, Jun. 2007.
27. 2 dielectric films, " Org. Electron., vol. 8, no. 4, pp. 455-459, Aug. 2007.
28. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, "Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations, " Phys. Rev. B, Condens. Matter, vol. 75, no. 3, p. 035 212, Jan. 2007.