Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 31, Issue 1, 2013, Pages

  Chalker, Paul R ^a   Marshall, Paul A ^a   Romani, Simon ^a   Roberts, Joseph W ^a   Irvine, Stuart J C ^b   Lamb, Daniel A ^b   Clayton, Andrew J ^b   Williams, Paul A ^c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b GLYNDWR UNIVERSITY   (United Kingdom)

^c SAFC Hitech   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE CURRENTS; DOPANT CONCENTRATIONS; ELECTRICAL SHEET RESISTANCE; FILL-FACTOR; GA-DOPED ZNO; GALLIUM DOPED ZINC OXIDES; GROWTH PARAMETERS; PHOTOVOLTAICS; TRANSPARENT CONDUCTING OXIDE; ZNO;

ATOMIC LAYER DEPOSITION; CADMIUM TELLURIDE; CONVERSION EFFICIENCY; GALLIUM; OXIDE FILMS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 84871910561     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4765642     Document Type: Article

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