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Volumn 115, Issue 31, 2011, Pages 15384-15389

Self-limiting film growth of transparent conducting In2O 3 by atomic layer deposition using trimethylindium and water vapor

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; HIGH ASPECT RATIO; LANGMUIRS; PROCESSING WINDOWS; STEP COVERAGE; SURFACE ADSORPTION; TRIMETHYLINDIUM;

EID: 79961231677     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2024389     Document Type: Article
Times cited : (73)

References (43)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.