Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Trinh, Thanh Thuy ^a   Nguyen, Van Duy ^a   Ryu, Kyungyul ^a   Jang, Kyungsoo ^a   Lee, Wonbeak ^a   Baek, Seungshin ^a   Raja, Jayapal ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CONTROLLING INTERFACES; FIELD-EFFECT MOBILITIES; HIGH CONDUCTIVITY; INTERFACE TRAP DENSITY; INTERFACE TRAPS; OFF CURRENT; ON/OFF CURRENT RATIO; OXYGEN DEFICIENCY; POST-ANNEALING EFFECT; RADIO FREQUENCY MAGNETRON SPUTTERING; SUBTHRESHOLD SWING; TEMPERATURE TREATMENTS; TREATMENT TEMPERATURE; XPS MEASUREMENTS;

AMORPHOUS FILMS; ANNEALING; OXYGEN; OXYGEN VACANCIES; PHASE INTERFACES; SEMICONDUCTING ORGANIC COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 80052016079     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085012     Document Type: Article

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