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Volumn 48, Issue 2, 2015, Pages 163-173

Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds

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EID: 84923072531     PISSN: 00014842     EISSN: 15204898     Source Type: Journal    
DOI: 10.1021/ar500241x     Document Type: Article
Times cited : (39)

References (45)
  • 2
    • 51149219283 scopus 로고
    • High-Quality Amorphous-Silicon Germanium Produced by Catalytic Chemical Vapor Deposition
    • Matsumura, H. High-Quality Amorphous-Silicon Germanium Produced by Catalytic Chemical Vapor Deposition Appl. Phys. Lett. 1987, 51, 804-805
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 804-805
    • Matsumura, H.1
  • 4
    • 78449304151 scopus 로고    scopus 로고
    • Carbon Nanotubes for Photoconversion and Electrical Energy Storage
    • Dillon, A. C. Carbon Nanotubes for Photoconversion and Electrical Energy Storage Chem. Rev. 2010, 110, 6856-6872
    • (2010) Chem. Rev. , vol.110 , pp. 6856-6872
    • Dillon, A.C.1
  • 8
    • 78650763448 scopus 로고    scopus 로고
    • 2 Molecules in CVD Processes
    • 2 Molecules in CVD Processes Chem. Vap. Deposition 2010, 16, 275-290
    • (2010) Chem. Vap. Deposition , vol.16 , pp. 275-290
    • Umemoto, H.1
  • 9
    • 0031556580 scopus 로고    scopus 로고
    • Bonding and Thermal Reactivity in Thin a-SiC:H films Grown by Methylsilane CVD
    • Lee, M.; Bent, S. F. Bonding and Thermal Reactivity in Thin a-SiC:H films Grown by Methylsilane CVD J. Phys. Chem. B 1997, 101, 9195-9205
    • (1997) J. Phys. Chem. B , vol.101 , pp. 9195-9205
    • Lee, M.1    Bent, S.F.2
  • 10
    • 0001461572 scopus 로고
    • Kinetics of SiC CVD-Surface Decomposition of Silacyclobutane and Methylsilane
    • Johnson, A.; Perrin, J.; Mucha, J.; Ibbotson, D. Kinetics of SiC CVD-Surface Decomposition of Silacyclobutane and Methylsilane J. Phys. Chem. 1993, 97, 12937-12948
    • (1993) J. Phys. Chem. , vol.97 , pp. 12937-12948
    • Johnson, A.1    Perrin, J.2    Mucha, J.3    Ibbotson, D.4
  • 11
    • 0000841185 scopus 로고    scopus 로고
    • Analysis of Xanthate Derivatives by Vacuum Ultraviolet Laser/Time-of-flight Mass Spectrometry
    • Shi, Y. J.; Hu, X.; Mao, D.; Dimov, S.; Lipson, R. H. Analysis of Xanthate Derivatives by Vacuum Ultraviolet Laser/Time-of-flight Mass Spectrometry Anal. Chem. 1998, 70, 4534-4539
    • (1998) Anal. Chem. , vol.70 , pp. 4534-4539
    • Shi, Y.J.1    Hu, X.2    Mao, D.3    Dimov, S.4    Lipson, R.H.5
  • 12
    • 0037156075 scopus 로고    scopus 로고
    • A 118 nm Vacuum Ultraviolet Laser/Time-of-flight Mass Spectroscopic Study of Methanol and Ethanol Clusters in the Vapor Phase
    • Shi, Y. J.; Consta, S.; Das, A.; Mallik, B.; Lacey, D.; Lipson, R. H. A 118 nm Vacuum Ultraviolet Laser/Time-of-flight Mass Spectroscopic Study of Methanol and Ethanol Clusters in the Vapor Phase J. Chem. Phys. 2002, 116, 6990-6999
    • (2002) J. Chem. Phys. , vol.116 , pp. 6990-6999
    • Shi, Y.J.1    Consta, S.2    Das, A.3    Mallik, B.4    Lacey, D.5    Lipson, R.H.6
  • 13
    • 15944396423 scopus 로고    scopus 로고
    • 4, 1,2-butadiene, and 2-butyne by supersonic jet/photoionization mass spectrometry
    • 4, 1,2-butadiene, and 2-butyne by supersonic jet/photoionization mass spectrometry J. Phys. Chem. A 2005, 109, 2190-2196
    • (2005) J. Phys. Chem. A , vol.109 , pp. 2190-2196
    • Chambreau, S.1    Lemieux, J.2    Wang, L.3    Zhang, J.S.4
  • 14
    • 43049083368 scopus 로고    scopus 로고
    • Decomposition of Hexamethyldisilane on a Hot Tungsten Filament and Gas-phase Reactions in a Hot-wire CVD Reactor
    • Shi, Y. J.; Li, X.; Tong, L.; Toukabri, R.; Eustergerling, B. Decomposition of Hexamethyldisilane on a Hot Tungsten Filament and Gas-phase Reactions in a Hot-wire CVD Reactor Phys. Chem. Chem. Phys. 2008, 10, 2543-2551
    • (2008) Phys. Chem. Chem. Phys. , vol.10 , pp. 2543-2551
    • Shi, Y.J.1    Li, X.2    Tong, L.3    Toukabri, R.4    Eustergerling, B.5
  • 16
    • 33748646645 scopus 로고    scopus 로고
    • Spectroscopic and Thermal Studies of a-SiC:H film Growth: Comparison of mono-, tri-, and tetramethylsilane
    • Lee, M.; Bent, S. F. Spectroscopic and Thermal Studies of a-SiC:H film Growth: Comparison of mono-, tri-, and tetramethylsilane J. Vac. Sci. Technol. A 1998, 16, 1658-1663
    • (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 1658-1663
    • Lee, M.1    Bent, S.F.2
  • 17
    • 84883143567 scopus 로고    scopus 로고
    • Formation of Methyl Radicals from Decomposition of Methyl-substituted Silanes over Tungsten and Tantalum Filament Surfaces
    • Toukabri, R.; Alkadhi, N.; Shi, Y. J. Formation of Methyl Radicals from Decomposition of Methyl-substituted Silanes over Tungsten and Tantalum Filament Surfaces J. Phys. Chem. A 2013, 117, 7697-7704
    • (2013) J. Phys. Chem. A , vol.117 , pp. 7697-7704
    • Toukabri, R.1    Alkadhi, N.2    Shi, Y.J.3
  • 18
    • 0035911456 scopus 로고    scopus 로고
    • Probing Radicals in Hot-wire Decomposition of Silane Using Single Photon Ionization
    • Duan, H.; Zaharias, G.; Bent, S. F. Probing Radicals in Hot-wire Decomposition of Silane Using Single Photon Ionization Appl. Phys. Lett. 2001, 78, 1784-1786
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 1784-1786
    • Duan, H.1    Zaharias, G.2    Bent, S.F.3
  • 19
    • 18744388562 scopus 로고    scopus 로고
    • The Aging of Tungsten Filaments and its Effect on Wire Surface Kinetics in Hot-wire CVD
    • Holt, J. K.; Swiatek, M.; Goodwin, D.; Atwater, H. A. The Aging of Tungsten Filaments and its Effect on Wire Surface Kinetics in Hot-wire CVD J. Appl. Phys. 2002, 92, 4803-4808
    • (2002) J. Appl. Phys. , vol.92 , pp. 4803-4808
    • Holt, J.K.1    Swiatek, M.2    Goodwin, D.3    Atwater, H.A.4
  • 20
    • 33646676062 scopus 로고    scopus 로고
    • Detecting Free Radicals during the Hot-wire CVD of Amorphous Silicon Carbide Films Using Single-source Precursors
    • Zaharias, G.; Duan, H.; Bent, S. F. Detecting Free Radicals During the Hot-wire CVD of Amorphous Silicon Carbide Films Using Single-source Precursors J. Vac. Sci. Technol. A 2006, 24, 542-549
    • (2006) J. Vac. Sci. Technol. A , vol.24 , pp. 542-549
    • Zaharias, G.1    Duan, H.2    Bent, S.F.3
  • 21
    • 33845558052 scopus 로고
    • Bond Dissociation Energy Values in Silicon-Containing Compounds and Some of Their Implications
    • Walsh, R. Bond Dissociation Energy Values in Silicon-Containing Compounds and Some of Their Implications Acc. Chem. Res. 1981, 14, 246-252
    • (1981) Acc. Chem. Res. , vol.14 , pp. 246-252
    • Walsh, R.1
  • 22
    • 21344460478 scopus 로고    scopus 로고
    • The Influence of Filament Material on Radical Production in Hot-wire CVD of a-Si:H
    • Duan, H.; Bent, S. F. The Influence of Filament Material on Radical Production in Hot-wire CVD of a-Si:H Thin Solid Films 2005, 485, 126-134
    • (2005) Thin Solid Films , vol.485 , pp. 126-134
    • Duan, H.1    Bent, S.F.2
  • 23
    • 34247334202 scopus 로고    scopus 로고
    • Mass Spectrometric Study of Gas-phase Chemistry in a Hot-wire CVD Reactor with Tetramethylsilane
    • Li, X.; Eustergerling, B.; Shi, Y. J. Mass Spectrometric Study of Gas-phase Chemistry in a Hot-wire CVD Reactor with Tetramethylsilane Int. J. Mass Spectrom. 2007, 263, 233-242
    • (2007) Int. J. Mass Spectrom. , vol.263 , pp. 233-242
    • Li, X.1    Eustergerling, B.2    Shi, Y.J.3
  • 24
    • 80052830356 scopus 로고    scopus 로고
    • Effect of Si-H Bond on the Gas-Phase Chemistry of Trimethylsilane in Hot-wire CVD
    • Shi, Y. J.; Li, X.; Toukabri, R.; Tong, L. Effect of Si-H Bond on the Gas-Phase Chemistry of Trimethylsilane in Hot-wire CVD J. Phys. Chem. A 2011, 115, 10290-10298
    • (2011) J. Phys. Chem. A , vol.115 , pp. 10290-10298
    • Shi, Y.J.1    Li, X.2    Toukabri, R.3    Tong, L.4
  • 25
    • 84898756313 scopus 로고    scopus 로고
    • Unraveling the Complex Chemistry uUsing Dimethylsilane as a Precursor Gas in Hot-wire CVD
    • Toukabri, R.; Shi, Y. J. Unraveling the Complex Chemistry uUsing Dimethylsilane as a Precursor Gas in Hot-wire CVD Phys. Chem. Chem. Phys. 2014, 16, 7896-7906
    • (2014) Phys. Chem. Chem. Phys. , vol.16 , pp. 7896-7906
    • Toukabri, R.1    Shi, Y.J.2
  • 26
    • 84902001348 scopus 로고    scopus 로고
    • Dominance of Silylene Chemistry in the Decomposition of Monomethylsilane in the Presence of a Heated Metal Filament
    • Toukabri, R.; Shi, Y. J. Dominance of Silylene Chemistry in the Decomposition of Monomethylsilane in the Presence of a Heated Metal Filament J. Phys. Chem. A 2014, 118, 3866-3874
    • (2014) J. Phys. Chem. A , vol.118 , pp. 3866-3874
    • Toukabri, R.1    Shi, Y.J.2
  • 27
    • 0142228757 scopus 로고    scopus 로고
    • Hetero-π-systems from 2 + 2 Cycloreversions. Part 1. Gusel'nikov-Flowers Route to Silenes and Origination of the Chemistry of Doubly-bonded Silicon
    • Gusel'nikov, L. E. Hetero-π-systems from 2 + 2 Cycloreversions. Part 1. Gusel'nikov-Flowers Route to Silenes and Origination of the Chemistry of Doubly-bonded Silicon Coord. Chem. Rev. 2003, 244, 149-240
    • (2003) Coord. Chem. Rev. , vol.244 , pp. 149-240
    • Gusel'Nikov, L.E.1
  • 28
    • 76249133046 scopus 로고    scopus 로고
    • Decomposition of 1,1-Dimethyl-1-silacyclobutane on a Tungsten Filament-Evidence of Both Ring C-C and Ring Si-C Bond Cleavages
    • Tong, L.; Shi, Y. J. Decomposition of 1,1-Dimethyl-1-silacyclobutane on a Tungsten Filament-Evidence of Both Ring C-C and Ring Si-C Bond Cleavages J. Mass Spectrom. 2010, 45, 215-222
    • (2010) J. Mass Spectrom. , vol.45 , pp. 215-222
    • Tong, L.1    Shi, Y.J.2
  • 29
    • 84867637998 scopus 로고    scopus 로고
    • Competition of Silene/Silylene Chemistry with Free-radical Chain Reactions Using 1-Methylsilacyclobutane in Hot-wire CVD
    • Badran, I.; Forster, T.; Roesler, R.; Shi, Y. J. Competition of Silene/Silylene Chemistry with Free-radical Chain Reactions Using 1-Methylsilacyclobutane in Hot-wire CVD J. Phys. Chem. A 2012, 116, 10054-10062
    • (2012) J. Phys. Chem. A , vol.116 , pp. 10054-10062
    • Badran, I.1    Forster, T.2    Roesler, R.3    Shi, Y.J.4
  • 30
    • 34249303832 scopus 로고    scopus 로고
    • In-situ Diagnostics of the Decomposition of Silacyclobutane on a Hot Filament by Vacuum Ultraviolet Laser Ionization Mass Spectrometry
    • Shi, Y. J.; Lo, B.; Tong, L.; Li, X.; Eustergerling, B.; Sorensen, T. In-situ Diagnostics of the Decomposition of Silacyclobutane on a Hot Filament by Vacuum Ultraviolet Laser Ionization Mass Spectrometry J. Mass Spectrom. 2007, 42, 575-583
    • (2007) J. Mass Spectrom. , vol.42 , pp. 575-583
    • Shi, Y.J.1    Lo, B.2    Tong, L.3    Li, X.4    Eustergerling, B.5    Sorensen, T.6
  • 32
    • 0000880296 scopus 로고
    • Mechanism of the Decomposition of Silacyclobutane to Silylene and Propene
    • Barton, T. J.; Tillman, N. Mechanism of the Decomposition of Silacyclobutane to Silylene and Propene J. Am. Chem. Soc. 1987, 109, 6711-6716
    • (1987) J. Am. Chem. Soc. , vol.109 , pp. 6711-6716
    • Barton, T.J.1    Tillman, N.2
  • 33
    • 79958152817 scopus 로고    scopus 로고
    • On the Geometric Structure, Puckering Potential and Electronic Transitions of Monosilacyclobutanes and Disilacyclobutanes-A Theoretical Study
    • Cai, Z.; Shi, Y. J. On the Geometric Structure, Puckering Potential and Electronic Transitions of Monosilacyclobutanes and Disilacyclobutanes-A Theoretical Study J. Mol. Spectrosc. 2011, 267, 178-185
    • (2011) J. Mol. Spectrosc. , vol.267 , pp. 178-185
    • Cai, Z.1    Shi, Y.J.2
  • 35
    • 64349120414 scopus 로고    scopus 로고
    • A Mechanistic Study of Gas-phase Reactions with 1,1,3,3-Tetramethyl-1,3-disilacyclobutane in Hot-wire CVD
    • Tong, L.; Shi, Y. J. A Mechanistic Study of Gas-phase Reactions with 1,1,3,3-Tetramethyl-1,3-disilacyclobutane in Hot-wire CVD Thin Solid Films 2009, 517, 3461-3465
    • (2009) Thin Solid Films , vol.517 , pp. 3461-3465
    • Tong, L.1    Shi, Y.J.2
  • 36
    • 0035801037 scopus 로고    scopus 로고
    • The influence of Different Catalyzers in Hot-wire CVD for the Deposition of Polycrystalline Silicon Thin Films
    • van Veenendaal, P.; Gijzeman, O.; Rath, J.; Schropp, R. E. I. The influence of Different Catalyzers in Hot-wire CVD for the Deposition of Polycrystalline Silicon Thin Films Thin Solid Films 2001, 395, 194-197
    • (2001) Thin Solid Films , vol.395 , pp. 194-197
    • Van Veenendaal, P.1    Gijzeman, O.2    Rath, J.3    Schropp, R.E.I.4
  • 37
    • 55049087973 scopus 로고    scopus 로고
    • Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic CVD
    • Honda, K.; Ohdaira, K.; Matsumura, H. Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic CVD Jpn. J. Appl. Phys. 2008, 47, 3692-3698
    • (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 3692-3698
    • Honda, K.1    Ohdaira, K.2    Matsumura, H.3
  • 38
    • 0037174216 scopus 로고    scopus 로고
    • Structural Changes of Tungsten Heating Filaments during CVD of Diamond
    • Zeiler, E.; Schwarz, S.; Rosiwal, S.; Singer, R. Structural Changes of Tungsten Heating Filaments During CVD of Diamond Mater. Sci. Eng., A 2002, 335, 236-245
    • (2002) Mater. Sci. Eng., A , vol.335 , pp. 236-245
    • Zeiler, E.1    Schwarz, S.2    Rosiwal, S.3    Singer, R.4
  • 40
    • 79958865841 scopus 로고    scopus 로고
    • Effect of Filament Temperature and Deposition Time on the Formation of Tungsten Silicide with Silane
    • Sveen, C.; Shi, Y. J. Effect of Filament Temperature and Deposition Time on the Formation of Tungsten Silicide with Silane Thin Solid Films 2011, 519, 4447-4450
    • (2011) Thin Solid Films , vol.519 , pp. 4447-4450
    • Sveen, C.1    Shi, Y.J.2
  • 42
    • 79958775594 scopus 로고    scopus 로고
    • Carburization of Tungsten Filaments in Hot-wire CVD using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane
    • Tong, L.; Shi, Y. J. Carburization of Tungsten Filaments in Hot-wire CVD using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane ACS Appl. Mater. Interfaces 2009, 1, 1919-1926
    • (2009) ACS Appl. Mater. Interfaces , vol.1 , pp. 1919-1926
    • Tong, L.1    Shi, Y.J.2
  • 43
    • 84874164401 scopus 로고    scopus 로고
    • Growth of Crystalline Tungsten Carbides Using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane on a Heated Tungsten Filament
    • Shi, Y. J.; Badran, I.; Tkalych, A.; Kan, W.; Thangadurai, V. Growth of Crystalline Tungsten Carbides Using 1,1,3,3-Tetramethyl-1,3-disilacyclobutane on a Heated Tungsten Filament J. Phys. Chem. C 2013, 117, 3389-3395
    • (2013) J. Phys. Chem. C , vol.117 , pp. 3389-3395
    • Shi, Y.J.1    Badran, I.2    Tkalych, A.3    Kan, W.4    Thangadurai, V.5
  • 44
    • 79958859504 scopus 로고    scopus 로고
    • Silicidation and Carburization of Tungsten Filament in HWCVD with Silacyclobutane Precursor Gases
    • Shi, Y. J.; Tong, L.; Eustergerling, B.; Li, X. Silicidation and Carburization of Tungsten Filament in HWCVD with Silacyclobutane Precursor Gases Thin Solid Films 2011, 519, 4442-4446
    • (2011) Thin Solid Films , vol.519 , pp. 4442-4446
    • Shi, Y.J.1    Tong, L.2    Eustergerling, B.3    Li, X.4
  • 45
    • 13444311724 scopus 로고    scopus 로고
    • Surface Chemistry of Transition Metal Carbides
    • Hwu, H. H.; Chen, J. G. G. Surface Chemistry of Transition Metal Carbides Chem. Rev. 2005, 105, 185-212
    • (2005) Chem. Rev. , vol.105 , pp. 185-212
    • Hwu, H.H.1    Chen, J.G.G.2


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