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Volumn 517, Issue 12, 2009, Pages 3461-3465
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A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process
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Author keywords
1,1,3,3 tetramethyl 1,3 disilacyclobutane; Catalytic CVD; Hot wire CVD; Silicon carbide; Vacuum ultraviolet single photon ionization
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Indexed keywords
1,1,3,3-TETRAMETHYL-1,3-DISILACYCLOBUTANE;
CATALYTIC CVD;
CHEMICAL SPECIES;
COMBINATION REACTIONS;
DIRECT DECOMPOSITIONS;
GAS-PHASE;
GAS-PHASE REACTIONS;
HOT WIRE CVD;
HOT-WIRE CHEMICAL VAPOR DEPOSITIONS;
HYDROGEN ABSTRACTION REACTIONS;
MECHANISTIC STUDIES;
METHYL RADICALS;
METHYLSILANE;
PARENT MOLECULES;
SECONDARY REACTIONS;
SI-C BONDS;
TIME-OF FLIGHT MASS SPECTROMETRIES;
TRIMETHYL;
TUNGSTEN FILAMENTS;
VACUUM ULTRAVIOLET SINGLE PHOTON IONIZATION;
CHEMICAL BONDS;
CHEMICAL VAPOR DEPOSITION;
FILAMENTS (LAMP);
HIGH PERFORMANCE LIQUID CHROMATOGRAPHY;
HYDROGEN;
IONIZATION OF GASES;
MASS SPECTROMETERS;
MASS SPECTROMETRY;
MULTIPHOTON PROCESSES;
PARTICLE BEAMS;
PHASE INTERFACES;
PHOTOIONIZATION;
PHOTONS;
SILICON CARBIDE;
TUNGSTEN;
VACUUM;
WIRE;
COUPLED CIRCUITS;
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EID: 64349120414
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.01.058 Document Type: Article |
Times cited : (19)
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References (21)
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