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Volumn 517, Issue 12, 2009, Pages 3461-3465

A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process

Author keywords

1,1,3,3 tetramethyl 1,3 disilacyclobutane; Catalytic CVD; Hot wire CVD; Silicon carbide; Vacuum ultraviolet single photon ionization

Indexed keywords

1,1,3,3-TETRAMETHYL-1,3-DISILACYCLOBUTANE; CATALYTIC CVD; CHEMICAL SPECIES; COMBINATION REACTIONS; DIRECT DECOMPOSITIONS; GAS-PHASE; GAS-PHASE REACTIONS; HOT WIRE CVD; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; HYDROGEN ABSTRACTION REACTIONS; MECHANISTIC STUDIES; METHYL RADICALS; METHYLSILANE; PARENT MOLECULES; SECONDARY REACTIONS; SI-C BONDS; TIME-OF FLIGHT MASS SPECTROMETRIES; TRIMETHYL; TUNGSTEN FILAMENTS; VACUUM ULTRAVIOLET SINGLE PHOTON IONIZATION;

EID: 64349120414     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.058     Document Type: Article
Times cited : (19)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.