Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases

Thin Solid Films

Volumn 519, Issue 14, 2011, Pages 4442-4446

  Shi, Y J ^a   Tong, L ^a   Eustergerling, B D ^a   Li, X M ^a  

^a UNIVERSITY OF CALGARY   (Canada)

Author keywords

1,1,3,3 tetramethyl 1,3 disilacyclobutane; Catalytic CVD; Filament aging; Hot wire CVD; Silacyclobutane; Silicon carbide; Tungsten carbide; Tungsten silicide

Indexed keywords

1,1,3,3-TETRAMETHYL-1,3-DISILACYCLOBUTANE; CATALYTIC CVD; HOT WIRE CVD; SILACYCLOBUTANE; TUNGSTEN SILICIDE;

GASES; PHASE INTERFACES; SILICIDES; SILICON CARBIDE; TUNGSTEN; WIRE PRODUCTS;

TUNGSTEN CARBIDE;

EID: 79958859504     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.291     Document Type: Conference Paper

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