Study of silicidation process of tungsten catalyzer during silicon film deposition in catalytic chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3692-3698

  Honda, Kazuhiro ^a   Ohdaira, Keisuke ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Cat CVD; Catalyzer; Hot wire CVD (HWCVD); Tungsten; Tungsten silicide

Indexed keywords

CATALYTIC CRACKING; CRACKING (CHEMICAL); DEPOSITION; ELECTROMAGNETIC WAVE EMISSION; ELECTROMAGNETIC WAVES; SILICIDES; SILICON; TUNGSTEN; VAPORS; WIRE;

CAT-CVD; CATALYTIC CHEMICAL VAPOR DEPOSITIONS; CATALYZER; EXTENDING; FILM DEPOSITIONS; HOT-WIRE CVD (HWCVD); METAL WIRES; SI FILMS; SILICIDATION; SILICIDATION PROCESSES; SILICIDE LAYERS; SILICON FILM DEPOSITIONS; SOURCE GASES; SURFACE EMISSIVITIES; SURFACE TEMPERATURES; TUNGSTEN SILICIDE; TWO PHASES;

CHEMICAL VAPOR DEPOSITION;

EID: 55049087973     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3692     Document Type: Article

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