The influence of different catalyzers in hot-wire CVD for the deposition of polycrystalline silicon thin films

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 194-197

  Van Veenendaal, P A T T ^a   Gijzeman, O L J ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Catalysis; Hot wire chemical vapour deposition; Silicon; X Ray photoelectron spectroscopy (XPS)

Indexed keywords

CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC WIRE; PHASE COMPOSITION; POLYSILICON; SATURATION (MATERIALS COMPOSITION); SURFACE REACTIONS; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

THIN FILMS;

EID: 0035801037     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01254-8     Document Type: Conference Paper

References (13)

1. Polycrystalline semiconductors VI - Bulk materials, thin films, and devices