Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H2 etching effect

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Tong, Ling ^a   Sveen, Chris E ^a   Shi, Yujun ^a  

^a UNIVERSITY OF CALGARY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITS; MASS SPECTROMETRY; METALLIZING; PRESSURE; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON; SILICON ALLOYS; SILICON CARBIDE; SILICON COMPOUNDS; TUNGSTEN; VAPORS; WIRE;

(1 1 0) SURFACE; (100) SILICON; (I ,J) CONDITIONS; AMERICAN INSTITUTE OF PHYSICS (AIP); AUGER ELECTRONS; CHEMICAL COMPOSITION ANALYSIS (XRQ); ETCHING PRODUCTS; FILAMENT SURFACES; HIGH TEMPERATURE (HT); HOT-WIRE CHEMICAL VAPOR DEPOSITION (HW-CVD); LOW PRESSURE (LP); LOW TEMPERATURE (LTR); PURE SILICON; SILACYCLOBUTANE; SINGLE PHOTONS; SOURCE GASES; TUNGSTEN FILAMENT AGING; VACUUM ULTRAVIOLET LASER; W FILAMENT;

FILAMENTS (LAMP);

EID: 46449088444     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949278     Document Type: Article

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