Effect of Si-H bond on the gas-phase chemistry of trimethylsilane in the hot wire chemical vapor deposition process

Journal of Physical Chemistry A

Volumn 115, Issue 37, 2011, Pages 10290-10298

  Shi, Y J ^a   Li, X M ^a   Toukabri, R ^a   Tong, L ^a  

^a UNIVERSITY OF CALGARY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BOND CLEAVAGES; COMMON FEATURES; CYCLOADDITION REACTION; GAS PHASE CHEMISTRY; GAS-PHASE REACTIONS; HEXAMETHYLDISILANES; HOT FILAMENT; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGEN ABSTRACTION; LASER IONIZATION; RADICAL RECOMBINATION REACTIONS; SECONDARY REACTIONS; SI-H BONDS; TETRAMETHYLSILANE; TRIMETHYLSILANE; TUNGSTEN FILAMENTS;

ABSTRACTING; CHEMICAL VAPOR DEPOSITION; COUPLED CIRCUITS; HYDROGEN; IONIZATION OF GASES; MASS SPECTROMETRY; MECHANISMS; PHASE INTERFACES; SILICON; TUNGSTEN; WIRE;

CYCLOADDITION;

EID: 80052830356     PISSN: 10895639     EISSN: 15205215     Source Type: Journal    
DOI: 10.1021/jp203966h     Document Type: Article

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