Spectroscopic and thermal studies of a-SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1658-1663

  Lee, Moon Sook ^a   Bent, Stacey F ^a  

^a NEW YORK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SIC:H; CONCENTRATION OF; FILM STRUCTURE; HIGHER TEMPERATURES; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGEN DESORPTION; IN-SITU; METHYL GROUP; METHYLSILANES; MONOMETHYLSILANE; MULTIPLE INTERNAL REFLECTIONS; SI-H BONDS; SINGLE-SOURCE PRECURSOR; TEMPERATURE-PROGRAMMED REACTION/DESORPTION; TETRAMETHYLSILANE; THERMAL REACTIVITY; THERMAL STUDY; TRIMETHYLSILANE;

ACETYLENE; CHEMICAL BONDS; DESORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHTING; METHANE; OPTICAL SENSORS; ORGANIC COMPOUNDS; SILANES; SILICON; SILICON CARBIDE;

FILM GROWTH;

EID: 33748646645     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581138     Document Type: Article

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