Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics

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Volumn 11, Issue 2, 2015, Pages 208-213

  Wang, Jingli ^a   Zou, Xuming ^a   Xiao, Xiangheng ^a   Xu, Lei ^a   Wang, Chunlan ^a   Jiang, Changzhong ^a   Ho, Johnny C ^b   Wang, Ti ^a   Li, Jinchai ^a   Liao, Lei ^a  

^a WUHAN UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; MOLYBDENUM COMPOUNDS; NANOCRYSTALS; SEMICONDUCTOR STORAGE;

AU NANOCRYSTALS; CHARGE TRAPPING LAYERS; FABRICATION TECHNOLOGIES; FLOATING GATE MEMORY; METAL NANOCRYSTALS; METALLIC NANOCRYSTALS; NANOCRYSTAL FLOATING-GATE MEMORY; RETENTION TIME;

GATE DIELECTRICS;

EID: 84920692692     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201401872     Document Type: Article

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