-
2
-
-
59049101290
-
Future challenges of flash memory technologies
-
Lu, C.-Y., Hsieh, K.-Y. & Liu, R. Future challenges of flash memory technologies. Microelectronic engineering 86, 283-286 (2009).
-
(2009)
Microelectronic Engineering
, vol.86
, pp. 283-286
-
-
Lu, C.-Y.1
Hsieh, K.-Y.2
Liu, R.3
-
3
-
-
0141856374
-
Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures
-
DOI 10.1021/nl034008t
-
Paul, S. et al. Langmuir2Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures. Nano Letters 3, 533-536 (2003). (Pubitemid 37140658)
-
(2003)
Nano Letters
, vol.3
, Issue.4
, pp. 533-536
-
-
Paul, S.1
Pearson, C.2
Molloy, A.3
Cousins, M.A.4
Green, M.5
Kolliopoulou, S.6
Dimitrakis, P.7
Normand, P.8
Tsoukalas, D.9
Petty, M.C.10
-
4
-
-
17444382701
-
Metal nanocrystal memory with high-κ tunneling barrier for improved data retention
-
DOI 10.1109/TED.2005.844793
-
Lee, J. J. & Kwong, D. L. Metal nanocrystal memory with high-k tunneling barrier for improved data retention. IEEE Trans Electron Devices 52, 507-511 (2005). (Pubitemid 40535875)
-
(2005)
IEEE Transactions on Electron Devices
, vol.52
, Issue.4
, pp. 507-511
-
-
Lee, J.J.1
Kwong, D.-L.2
-
5
-
-
33748280650
-
Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
-
Yim, S.-S., Lee, M.-S., Kim, K.-S. & Kim, K.-B. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications. Appl. Phys. Lett. 89, 093115 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 093115
-
-
Yim, S.-S.1
Lee, M.-S.2
Kim, K.-S.3
Kim, K.-B.4
-
6
-
-
36849001927
-
Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties
-
DOI 10.1038/nnano.2007.380, PII NNANO2007380
-
Lee, J.-S. et al. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. Nature Nanotechnology 2, 790-795 (2007). (Pubitemid 350223346)
-
(2007)
Nature Nanotechnology
, vol.2
, Issue.12
, pp. 790-795
-
-
Lee, J.-S.1
Cho, J.2
Lee, C.3
Kim, I.4
Park, J.5
Kim, Y.-M.6
Shin, H.7
Lee, J.8
Caruso, F.9
-
7
-
-
58449084731
-
Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
-
Lee, J.-S. et al. Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer. Advanced Materials 21, 178-183 (2009).
-
(2009)
Advanced Materials
, vol.21
, pp. 178-183
-
-
Lee, J.-S.1
-
8
-
-
74849119167
-
Metal nanodot memory by self-assembled block copolymer lift-off
-
Hong, A. J. et al. Metal Nanodot Memory by Self-Assembled Block Copolymer Lift-Off. Nano Letters 10, 224-229 (2010).
-
(2010)
Nano Letters
, vol.10
, pp. 224-229
-
-
Hong, A.J.1
-
9
-
-
80052523231
-
Progress in non-volatile memory devices based on nanostructured materials and nanofabrication
-
Lee, J.-S. Progress in non-volatile memory devices based on nanostructured materials and nanofabrication. J. Mater. Chem. 21, 14097 (2011).
-
(2011)
J. Mater. Chem.
, vol.21
, pp. 14097
-
-
Lee, J.-S.1
-
10
-
-
84855250778
-
Developments in nanocrystal memory
-
Chang, T.-C., Jiana, F.-Y., Chen, S.-C. & Tsai, Y.-T. Developments in nanocrystal memory. Materials today 14, 608-615 (2011).
-
(2011)
Materials Today
, vol.14
, pp. 608-615
-
-
Chang, T.-C.1
Jiana, F.-Y.2
Chen, S.-C.3
Tsai, Y.-T.4
-
11
-
-
80054096580
-
Nano-floating gate memory devices
-
Lee, J.-S. Nano-Floating Gate Memory Devices. Electronic Materials Letters 7, 175-183 (2011).
-
(2011)
Electronic Materials Letters
, vol.7
, pp. 175-183
-
-
Lee, J.-S.1
-
12
-
-
33847690144
-
The rise of graphene
-
DOI 10.1038/nmat1849, PII NMAT1849
-
Geim, A. K. & Novoselov, K. S. The rise of graphene. Nature materials 6, 183-191 (2007). (Pubitemid 46353764)
-
(2007)
Nature Materials
, vol.6
, Issue.3
, pp. 183-191
-
-
Geim, A.K.1
Novoselov, K.S.2
-
13
-
-
80055020282
-
Graphene flash memory
-
Hong, A. J. et al. Graphene Flash Memory. ACS Nano 5, 7812-7817 (2011).
-
(2011)
ACS Nano
, vol.5
, pp. 7812-7817
-
-
Hong, A.J.1
-
14
-
-
77951190481
-
Wide memory window in graphene oxide charge storage nodes
-
Wang, S., Pu, J., Chan, D. S. H., Cho, B. J. & Loh, K. P. Wide Memory Window in Graphene Oxide Charge Storage Nodes. Appl. Phys. Lett. 96, 143109 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 143109
-
-
Wang, S.1
Pu, J.2
Chan, D.S.H.3
Cho, B.J.4
Loh, K.P.5
-
15
-
-
84864119961
-
Multilayer Graphene as Charge Storage Layer in Floating Gate Flash Memory
-
Milan, Italy
-
Misra, A. et al. Multilayer Graphene as Charge Storage Layer in Floating Gate Flash Memory. 2012 4th IEEE International Memory Workshop, Milan, Italy (2012).
-
(2012)
2012 4th IEEE International Memory Workshop
-
-
Misra, A.1
-
16
-
-
84873627210
-
Layer-by-layer-assembled reduced graphene oxide/gold nanoparticle hybrid double-floating-gate structure for low-voltage flexible flash memory
-
Han, S. et al. Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory. Advanced Materials 25, 872-877 (2013).
-
(2013)
Advanced Materials
, vol.25
, pp. 872-877
-
-
Han, S.1
-
17
-
-
79952185709
-
Catalyst-free growth of nanographene film on various substrates
-
Zhang, L. et al. Catalyst-free growth of nanographene film on various substrates. Nano Research 4, 315-321 (2011).
-
(2011)
Nano Research
, vol.4
, pp. 315-321
-
-
Zhang, L.1
-
18
-
-
84860571450
-
Growth characterization and properties of nanographene
-
Yang, W. et al. Growth Characterization and Properties of Nanographene. Small 8, 1429-1435 (2012).
-
(2012)
Small
, vol.8
, pp. 1429-1435
-
-
Yang, W.1
-
19
-
-
84862791992
-
Vapour-phase graphene epitaxy at low temperatures
-
Zhang, L. et al. Vapour-Phase Graphene Epitaxy at Low Temperatures. Nano Research 5, 258-264 (2012).
-
(2012)
Nano Research
, vol.5
, pp. 258-264
-
-
Zhang, L.1
-
20
-
-
0001153756
-
Ultrahigh-vacuum quasiepitaxialgrowth of model van der Waals thin films. II. Experiment
-
Forrest, S. R., Burrows, P. E., Haskal, E. I. & So, F. F. Ultrahigh-vacuum quasiepitaxialgrowth of model van der Waals thin films. II. Experiment. Phy. Rev. B 49, 11309-11321 (1994).
-
(1994)
Phy. Rev. B
, vol.49
, pp. 11309-11321
-
-
Forrest, S.R.1
Burrows, P.E.2
Haskal, E.I.3
So, F.F.4
-
21
-
-
84862294401
-
Van der Waals Epitaxy of MoS2 Layers Using Graphene as Growth Templates
-
Shi, Y. et al. van der Waals Epitaxy of MoS2 Layers Using Graphene as Growth Templates. Nano Letters 12, 2784-2791 (2012).
-
(2012)
Nano Letters
, vol.12
, pp. 2784-2791
-
-
Shi, Y.1
-
22
-
-
0035882062
-
Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon
-
Ferrari, A. C. & Robertson, J. Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon. Phys. Rev. B 64, 075414 (2001).
-
(2001)
Phys. Rev. B
, vol.64
, pp. 075414
-
-
Ferrari, A.C.1
Robertson, J.2
-
23
-
-
34249889935
-
Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects
-
DOI 10.1016/j.ssc.2007.03.052, PII S0038109807002967, Exploring graphene Recent research advances
-
Ferrari, A. C. Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects. Solid State Communications 143, 47-57 (2007). (Pubitemid 46874496)
-
(2007)
Solid State Communications
, vol.143
, Issue.1-2
, pp. 47-57
-
-
Ferrari, A.C.1
-
24
-
-
80051638443
-
Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
-
Cancado, L. G. et al. Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies. Nano Letters 11, 3190-3196 (2011).
-
(2011)
Nano Letters
, vol.11
, pp. 3190-3196
-
-
Cancado, L.G.1
-
25
-
-
46849118052
-
Real versus Measured Surface Potentials in Scanning Kelvin Probe Microscopy
-
Charrier, D. S. H., Kemerink, M., Smalbrugge, B. E., Vries, T. & Janssen, R. A. J. Real versus Measured Surface Potentials in Scanning Kelvin Probe Microscopy. ACS Nano 2, 622-626 (2008).
-
(2008)
ACS Nano
, vol.2
, pp. 622-626
-
-
Charrier, D.S.H.1
Kemerink, M.2
Smalbrugge, B.E.3
Vries, T.4
Janssen, R.A.J.5
-
26
-
-
33746814810
-
Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy
-
Tzeng, S.-D. & Gwoa, S. Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy. Journal of Applied Physics 100, 023711 (2006).
-
(2006)
Journal of Applied Physics
, vol.100
, pp. 023711
-
-
Tzeng, S.-D.1
Gwoa, S.2
-
27
-
-
82955164092
-
Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy
-
Zhu, C. et al. Investigation on interface related charge trap and loss characteristics of high-k based trapping structures by electrostatic force microscopy. Appl. Phys. Lett. 99, 223504 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 223504
-
-
Zhu, C.1
-
28
-
-
33646920085
-
Data retention characteristics of nitride-based charge trap memory devices with high-k dielectrics and high-work-function metal gates for multi-gigabit flash memory
-
DOI 10.1143/JJAP.45.3213
-
Lee, J.-S. et al. Data retention characteristics of nitride-based charge trap memory devices with high-k dielectrics and high-work-function metal gates for multigigabit flash memory. Jpn J. Appl. Phys. 45, 3213-3216 (2006). (Pubitemid 43794172)
-
(2006)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.45
, Issue.4 B
, pp. 3213-3216
-
-
Lee, J.-S.1
Kang, C.-S.2
Shin, Y.-C.3
Lee, C.-H.4
Park, K.-T.5
Sel, J.-S.6
Kim, V.7
Choe, B.-I.8
Sim, J.-S.9
Choi, J.10
Kim, K.11
-
29
-
-
61649085309
-
Surface potentials and layer charge distributions in few-layer graphene films
-
Datta, S. S., Strachan, D. R., Mele, E. J. & Charlie Johnson, A. T. Surface potentials and layer charge distributions in few-layer graphene films. Nano letters 9, 7-11 (2009).
-
(2009)
Nano Letters
, vol.9
, pp. 7-11
-
-
Datta, S.S.1
Strachan, D.R.2
Mele, E.J.3
Charlie Johnson, A.T.4
-
30
-
-
67649119884
-
Charging and discharging of graphene in ambient conditions studied with scanning probe microscopy
-
Verdaguer, A. et al. Charging and discharging of graphene in ambient conditions studied with scanning probe microscopy. Appl. Phys. Lett. 94, 233105 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 233105
-
-
Verdaguer, A.1
-
31
-
-
72849122590
-
Tuning the graphene work function by electric field effect
-
Yu, Y.-J. et al. Tuning the Graphene Work Function by Electric Field Effect. Nano Letters 9, 3430-3434 (2009).
-
(2009)
Nano Letters
, vol.9
, pp. 3430-3434
-
-
Yu, Y.-J.1
-
32
-
-
77951615752
-
Quantum Confinement by an Order-Disorder Boundary in Nanocrystalline Silicon
-
Bagolini, L., Mattoni, A., Fugallo, G. & Colombo, L. Quantum Confinement by an Order-Disorder Boundary in Nanocrystalline Silicon. Phys. Rev. Lett. 104, 176803 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.104
, pp. 176803
-
-
Bagolini, L.1
Mattoni, A.2
Fugallo, G.3
Colombo, L.4
-
33
-
-
60949104104
-
The influence of edge structure on the electronic properties of graphene quantum dots and nanoribbons
-
Ritter, K. A. & Lyding, J. W. The Influence of Edge Structure on the Electronic Properties of Graphene Quantum Dots and Nanoribbons. Nature Materials 8, 235-242 (2009).
-
(2009)
Nature Materials
, vol.8
, pp. 235-242
-
-
Ritter, K.A.1
Lyding, J.W.2
-
34
-
-
79955818551
-
Tranforming C60 molecules into graphene quantum dots
-
Liu, J., Yeo, P. S. E., Gan, C. K., Wu, P. & Loh, K. P. Tranforming C60 Molecules into Graphene Quantum Dots. Nature Nanotechnology 6, 247-252 (2011).
-
(2011)
Nature Nanotechnology
, vol.6
, pp. 247-252
-
-
Liu, J.1
Yeo, P.S.E.2
Gan, C.K.3
Wu, P.4
Loh, K.P.5
-
36
-
-
54249111065
-
3 single quantum well for nanoscale flash memory device applications
-
3 Single Quantum Well for Nanoscale Flash Memory Device Applications. Japanese Journal of Applied Physics 47, 1818-1821 (2008).
-
(2008)
Japanese Journal of Applied Physics
, vol.47
, pp. 1818-1821
-
-
Maikap, S.1
|