A nonvolatile memory capacitor based on Au nanocrystals with HfO 2 tunneling and blocking layers

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Mikhelashvili, V ^a   Meyler, B ^a   Yoffis, S ^a   Salzman, J ^a   Garbrecht, M ^a   Cohen Hyams, T ^a   Kaplan, W D ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AU NANOCRYSTALS; BLOCKING LAYERS; C-V CHARACTERISTIC; CHARGE STORAGE; CONTROL LAYERS; FLAT-BAND VOLTAGE SHIFT; FREQUENCY DEPENDENCE; GATE VOLTAGES; GOLD NANOCRYSTALS; LARGE HYSTERESIS; NON-VOLATILE MEMORIES; OXIDE THICKNESS; VOLTAGE SWINGS;

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; NANOCRYSTALS; TUNNELING (EXCAVATION); WIND TUNNELS;

NONVOLATILE STORAGE;

EID: 67650745565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3176411     Document Type: Article

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