Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer

Surface Science

Volumn 601, Issue 13, 2007, Pages 2859-2863

  Sargentis, Ch ^a   Giannakopoulos, K ^b   Travlos, A ^b   Tsamakis, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

C V; Discharge mechanism; Floating gate memory; Metal nanoparticles; Metallic nanoparticles; Nanocrystal memory; Nonvolatile memory; Retention time

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON GUNS; MOSFET DEVICES; NANOCRYSTALS; NANOPARTICLES; NONVOLATILE STORAGE; PLATINUM; SILICA;

DISCHARGE MECHANISMS; ELECTRON GUN EVAPORATION; FLOATING GATE MEMORY; NANOCRYSTAL MEMORY; RETENTION TIME;

MOS DEVICES;

EID: 34250856301     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.11.064     Document Type: Article

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