Short-circuit tests on SiC power MOSFETs

Proceedings of the International Conference on Power Electronics and Drive Systems

Volumn , Issue , 2013, Pages 1297-1300

  Castellazzi, Alberto ^a   Funaki, Tsuyoshi ^b   Kimoto, Tsunenobu ^c   Hikihara, Takashi ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b OSAKA UNIVERSITY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD APPLICATION; DEVICE DESIGN; HIGH VOLTAGE; POWER MOSFETS; POWER SYSTEM DEVELOPMENT; SHORT CIRCUIT TESTS; SHORT-CIRCUIT CONDITIONS; SMART POWER TECHNOLOGIES;

MOSFET DEVICES; POWER ELECTRONICS; SILICON;

SILICON CARBIDE;

EID: 84880720262     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PEDS.2013.6527219     Document Type: Conference Paper

References (9)

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