Experimental investigation of Si IGBT short circuit capability at 200°C

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2012, Pages 162-168

  Xu, Zhuxian ^a   Wang, Fred ^a,b  

^a University of Tennessee   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

200 C operation; failure mechanism; short circuit capability; Si trench gate field stop IGBT

Indexed keywords

EXPERIMENTAL INVESTIGATIONS; FAILURE MECHANISM; HIGH TEMPERATURE; LATCH-UPS; PROTECTION CIRCUITS; SHORT CIRCUIT CAPABILITY; SHORT CIRCUIT FAILURE; SHORT CIRCUIT TIME; SHORT-CIRCUIT CONDITIONS; TEST CIRCUIT; THERMAL DESTRUCTION; THERMAL RUNAWAYS; TRENCH GATES;

EXHIBITIONS; HIGH TEMPERATURE OPERATIONS; POWER ELECTRONICS;

SILICON;

EID: 84860212513     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2012.6165814     Document Type: Conference Paper

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