An experimental evaluation of sic switches in soft-switching converters

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2527-2538

  Ranstad, Per ^a   Nee, Hans Peter ^b   Linner, Jorgen ^a   Peftitsis, Dimosthenis ^b  

^a Alstom Power   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Bipolar junction transistor (BJT); conductivity modulation; insulated gate bipolar transistor (IGBT); junction field effect transistor (JFET); metal oxide semiconductor FET (MOSFET); resonant converters; silicon carbide (SiC); soft switching

Indexed keywords

CONDUCTIVITY MODULATION; JUNCTION FIELD-EFFECT TRANSISTORS; MOS-FET; RESONANT CONVERTERS; SILICON CARBIDES (SIC);

FIELD EFFECT TRANSISTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MODULATION; SILICON; SOFT SWITCHING; SWITCHING CIRCUITS; TRANSISTORS;

SILICON CARBIDE;

EID: 84893080393     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2265380     Document Type: Article

References (37)

1. M. Hartmann, H. Ertl, and J. W. Kolar, "On the tradeoff between input current quality and efficiency of high switching frequency PWM rectifiers," IEEE Trans. Power Electron., vol. 27, no. 7, pp. 3137-3149, Jul. 2012.
2. T. T. Song, H. Wuang, H. Chung, S. Taphui, and A. Ioinovici, "A highvoltage ZVZCS DC-DC converter with low voltage stress," IEEE Trans. Power Electron., vol. 23, no. 6, pp. 2630-2647, Nov. 2008.
3. D. Fu, F. C. Lee, Y. Qui, and F. Wang, "A novel high-power-density three-level LCC resonant converter with constant-power-factor-control for charging applications," IEEE Trans. Power Electron., vol. 23, no. 5, pp. 2411-2424, Sep. 2008.
4. C. M. Bingham, Y. A. Ang, M. P. Foster, and D. A. Stone, "Analysis and control of dual-output LCLC resonant converters with significant leakage inductance," IEEE Trans. Power Electron., vol. 23, no. 4, pp. 1724-1732, Jul. 2008.
5. J. A. Carr, B. Rowden, and J. C. Balda, "A three-level full-bridge zerovoltage zero-current switching converter with a simplified switching scheme," IEEE Trans. Power Electron., vol. 24, no. 2, pp. 329-338, Feb. 2009.
6. K. Wang, F. C. Lee, G. Hua, and D. Borojevic, "A comparative study of switching losses of IGBTs under hard-switching, zero-voltage-switching, and zero-current-switching," in Proc. IEEE PESC, 1994, pp. 1196-1203.
7. G. Ivensky, A. Kats, and S. Ben-Yaakov, "Reducing IGBT losses in ZCS series resonant converters," IEEE Trans. Ind. Electron., vol. 46, no. 1, pp. 67-74, Feb. 1999.
8. O. Deblecker, A. Moretti, and F. Vallée, "Comparative study of softswitched isolated DC-DC converters for auxiliary railway supply," IEEE Trans. Power Electron., vol. 23, no. 5, pp. 2211-2229, Sep. 2008.
9. D. V. Ghodke, K. Chatterjee, and B. G. Fernandes, "Three-phase three level, soft switched, phase shiftedPWMDC-DC converter for high power applications," IEEE Trans. Power Electron., vol. 23, no. 3, pp. 1214-1227, May 2008. (Pubitemid 351756697)
10. M. Borage, S. Tiwari, S. Bhardwaj, and S.Kotaiah, "Afull-bridge DC-DC converter with zero-voltage-switching over the entire conversion ranges," IEEE Trans. Power Electron., vol. 23, no. 4, pp. 1743-1750, Jul. 2008.
11. R. L. Steigerwald, "A comparison of half-bridge resonant converter topologies," IEEE Trans. Power Electron., vol. 3, no. 2, pp. 174-182, Apr. 1988.
12. A. F. Witulski and R. W. Erickson, "Steady-state analysis of the series resonant converter," IEEE Trans. Aerosp. Electron. Syst., vol. AES-21, no. 6, pp. 792-799, Nov. 1985.
13. J. Krishnaswami and N. Mohan, "Three-port series-resonant DC-DC converter to interface renewable energy sources with bidirectional load and energy storage ports," IEEE Trans. Power Electron., vol. 24, no. 10, pp. 2289-2297, Oct. 2009.
14. A. Bucher, T. Duerbaum, D. Kuebrich, and M. Schmid, "Consideration of conduction losses for the series resonant converter by means of simple extension to the SPA approach," in Proc. EPE PEMC 2008, pp. 244-249.
15. M. Nakaoka, S. Ngai, Y. J. Kim, Y. Ogino, and Y. Murakami, "The state of the art phase-shifted ZVS-PWM series and parallel resonant converters using internal parasitic circuit components and new digital control," in Proc. PESC-92, 1992, pp. 62-70.
16. P. Ranstad, H.-P. Nee, and J. Linner, "A novel control strategy applied to the series loaded resonant converter," in Proc. Eur. Power Electron. Conf. Appl. EPE 2005, Dresden, Germany, 2005.
17. V. K. Khanna, The Insulated Gate Bipolar Transistor (IGBT): Theory and Design. Piscataway, NJ, USA: IEEE Press, 2003. ISBN 0-471-23845-7.
18. B. J. Baliga, Fundamentals ofPower SemiconductorDevices. NewYork, NY, USA: Springer-Verlag, 2008. ISBN 978-0-387-47313-0.
19. A. Petterteig, J. Lode, and T. M. Undeland, "IGBT turn-off losses for hard switching and with capacitive snubbers," in Proc. Conf. Rec. 26th IAS Annu. Meeting, 1991, pp. 1501-1507.
20. I. Widjaja, A. Kurnia, K. Shenai, and D. M. Divan, "Switching dynamics of IGBT's in soft-switching converters," IEEE Trans. Electron Devices, vol. 42, no. 3, pp. 445-454, Mar. 1995.
21. H. H. Li, A. Kurnia, D. Divan, and K. Shenai, "High-temperature turnoff performance of IGBTs in resonant converters," in Proc. IEEE PESC, 1995, pp. 256-258.
22. P. Ranstad and H.-P. Nee, "On dynamic effects influencing IGBT losses in soft-switching converters," IEEE Trans. Power Electron., vol. 26, no. 1, pp. 260-271, Jan. 2011.
23. D. Peftitsis, J. Rabkowski, and H.-P. Nee, "Self-powered gate driver for normallyONsilicon carbide junction field-effect transistors without external power supply," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1488-1501, Mar. 2013.
24. D. Peftitsis, R. Baburske, J. Rabkowski, J. Lutz, G. Tolstoy, and H.-P. Nee, "Challenges regarding parallel connection of SiC JFETs," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1449-1463, Mar. 2013.
25. A. Trentin, P. Zanchetta, P. Wheeler, and J. Clare, "Performance evaluation of high-voltage 1.2 kV silicon carbide metal oxide semi-conductor field effect transistors for three-phase buck-type PWM rectifiers in aircraft applications," IET Power Electron., vol. 5, no. 9, pp. 1873-1881, 2012.
26. J. Rabkowski, G. Tolstoy, D. Peftitsis, and H.-P. Nee, "Low-loss highperformance base-drive unit for SiC BJTs," IEEE Trans. Power Electron., vol. 27, no. 5, pp. 2633-2643, May 2012.
27. B. Wrzecionko, D. Bortis, J. Biela, and J. W. Kolar, "Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs," IEEE Trans. Power Electron., vol. 27, no. 7, pp. 3452-3463, Jul. 2012.
28. K. Chatty, D. C. Sheridan, V. Bondarenko, R. Schrader, K. Speer, and J. B. Casady, "Recent advances in VJFETs at SemiSouth," ECS Trans., vol. 50, no. 3, pp. 53-63, 2012.
29. E. Platania, Z. Chen, F. Chimento, L. Lu, E. Santi, A. Raciti, J. Hudgins, A. Mantooth, D. Sheridan, and J. Cassady, "A physics-based model for a SiC JFET device accounting for the mobility dependence on temperature and electric field," in Proc. IEEE Ind. Appl. Soc. Annu. Meeting (IAS 2008).
30. V. Vlatkovic, M. J. Schutten, and R. L. Steigerwald, "Auxiliary series resonant converter: A new converter for high-voltage, high-power applications," in Proc. PESC-96, pp. 493-499.
31. J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, "Status and prospects for SiC power MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 658-664, Apr. 2002. (Pubitemid 34491850)
32. P. Friedrichs and R. Rupp, "Silicon carbide power devices: Current developments and potential applications," in Proc. Eur. Conf. Power Electron. Appl. (EPE 2005).
33. M. Treu, R. Rupp, P. Blaschitz, K. Ruschenschmidt, T. Sekinger, P. Friedrichs, R. Elpelt, and D. Peters, "Strategic considerations for unipolar SiC switch options: JFET vs. MOSFET," in Proc. 42nd IAS Annu. Meeting IEEE Ind. Appl. Conf., Sep. 23-27, 2007, pp. 324-330.
34. C. J. Cochrane, P. M. Lenahan, and A. Lelis, "Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs," in Proc. of Int. Semicond. Device Res. Symp. (ISDRS), 2011.
35. A. P. Mihaila, F. Udrea, S. J. Rashid, P. Godignon, and J. Millan, "SiC junction FETs-A state of the art review," in Proc. 2005 Int. Semicond. Conf. (CAS 2005), vol. 2, pp. 349-352. (Pubitemid 44867434)
36. B. A° llebrand and H.-P. Nee, "On the possibility to use SiC JFETs in power Electronic circuits," in Proc. of the Eur. Conf. Power Electron. Appl. 2001 (EPE 2001), Aug. 2001.
37. A. Lindgren and M. Domeij, "Degradation free fast switching 1200 V 50 A silicon carbide BJT's," in Proc. of 2011 26th Annu. IEEE Appl. Power Electron. Conf. Expo. (APEC 2011), pp. 1064-1070.