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Volumn , Issue , 2013, Pages 197-200

Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

Author keywords

[No Author keywords available]

Indexed keywords

DC-BUS VOLTAGES; FAULT PROTECTION; NORMALLY OFF; POWER SWITCHES; SATURATION CURRENT; SIC MOSFET; SIC MOSFETS; TEMPERATURE COEFFICIENT;

EID: 84879391015     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2013.6520207     Document Type: Conference Paper
Times cited : (113)

References (9)
  • 1
    • 84870943485 scopus 로고    scopus 로고
    • Reliability of 4h-sic sbd/jbs diodes under repetitive surge current stress
    • 2012 IEEE, sept.
    • X. Huang, G. Wang, M.-C. Lee, and A. Q. Huang, "Reliability of 4h-sic sbd/jbs diodes under repetitive surge current stress," in Energy Conversion Congress and Exposition (ECCE), 2012 IEEE, sept. 2012, pp. 2245-2248.
    • (2012) Energy Conversion Congress and Exposition (ECCE) , pp. 2245-2248
    • Huang, X.1    Wang, G.2    Lee, M.-C.3    Huang, A.Q.4
  • 3
    • 63849184340 scopus 로고    scopus 로고
    • Investigation into short-circuit ruggedness of 1.2 kV 4H-sic MOSFETs
    • Y. Nakao, S. Watanabe, N. Miura, M. Imaizumi, and T. Oomori, "Investigation into short-circuit ruggedness of 1.2 kV 4H-SiC MOSFETs," Materials Science Forum, vol. 600-603, pp. 1123-1126, 2009.
    • (2009) Materials Science Forum , vol.600-603 , pp. 1123-1126
    • Nakao, Y.1    Watanabe, S.2    Miura, N.3    Imaizumi, M.4    Oomori, T.5
  • 4
    • 77949929782 scopus 로고    scopus 로고
    • FREEDM system: Role of power electronics and power semiconductors in developing an energy internet
    • ISPSD 2009. 21st International Symposium on, Jun. 2009
    • A. Huang and J. Baliga, "FREEDM system: Role of power electronics and power semiconductors in developing an energy internet;' in Power Semiconductor Devices Ie's, 2009. ISPSD 2009. 21st International Symposium on, Jun. 2009, pp. 9-12.
    • (2009) Power Semiconductor Devices Ie's , pp. 9-12
    • Huang, A.1    Baliga, J.2
  • 6
    • 0035395786 scopus 로고    scopus 로고
    • Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
    • IEEE Transactions on Jul.
    • M. Roschke and F. Schwierz, "Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]," Electron Devices, IEEE Transactions on, vol. 48, no. 7, pp. 1442-1447, Jul. 2001.
    • (2001) Electron Devices , vol.48 , Issue.7 , pp. 1442-1447
    • Roschke, M.1    Schwierz, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.