Unclamped repetitive stress on 1200 v normally-off SiC JFETs

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2420-2425

  Abbate, C ^a   Busatto, G ^a   Iannuzzo, F ^a  

^a UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT MECHANISMS; EXPERIMENTAL CHARACTERIZATION; GATE-LEAKAGE CURRENT; TIME EVOLUTIONS; VERTICAL CHANNELS;

MAGNETIC MATERIALS; MICROELECTRONICS;

SILICON CARBIDE;

EID: 84866740853     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.097     Document Type: Article

References (12)

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