High temperature stability and the performance degradation of sic MOSFETs

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2329-2337

  Zhou, Weicheng ^a   Zhong, Xueqian ^a   Sheng, Kuang ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Degradation; SiC MOSFET; thermal runaway temperature

Indexed keywords

HIGH TEMPERATURE POWER ELECTRONICS; HIGH TEMPERATURE STABILITY; HIGH TEMPERATURE STORAGE; JUNCTION TEMPERATURES; PERFORMANCE DEGRADATION; POWER SEMICONDUCTOR DEVICES; SIC MOSFET; THERMAL RUNAWAYS;

COMPUTER SIMULATION; DEGRADATION; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; POWER ELECTRONICS; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84893075332     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2283509     Document Type: Article

References (23)

1. B. J. Baliga, "Trends in power semiconductor devices," IEEE Trans. Electron. Devices, vol. 43, no. 10, pp. 1717-1731, Oct. 1996.
2. J. W. Palmour, C. H. Carter, K. Moore, K. K. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, "Silicon carbide high-power devices," IEEE Trans. Electron. Devices, vol. 43, no. 10, pp. 1732-1741, Oct. 1996. (Pubitemid 126769163)
3. M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, "Status and prospects for SiC power MOSFETs," IEEE Trans. Electron. Devices, vol. 49, no. 4, pp. 658-664, Apr. 2002. (Pubitemid 34491850)
4. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, "6 H-Silicon Carbide power devices for aerospace applications," in Proc. 28th Intersoc. Energy Convers. Energy Conf., 1993, pp. 1249-1254.
5. J. N. Shenoy, J. A. Cooper, and M. R. Melloch, "High-Voltage doubleimplanted power MOSFET structure," IEEE Trans. Electron. Devices, vol. 18, no. 12, pp. 589-591, Dec. 1997.
6. S. H. Ryu, A. Agarwal, J. Richmond, M. Das, L. Lipkin, J. Palmour, N. Saks, and J. Williams, "Large-Area (3.3 mm×3.3 mm) power MOSFETs in 4 H-SiC," Mater. Sci. Forum, vol. 389-393, pp. 1195-1198, 2002. (Pubitemid 35362534)
7. S. H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, and A. Hefner, "10 kV, 5 A 4 H-SiC Power DMOSFET," in Proc. Int. Symp. Power Semiconduct. Devices IC's, Jun. 2006, pp. 1-4.
8. M. Horio, Y. Iizuka, Y Ikeda, E. Mochizuki, and Y. Takahashi, "Ultra compact and high reliable SiCMOSFET power module with 200 ?C operating capability," in Proc. 24th Int. Symp. Int. Symp. Power Semiconduct. Devices IC's, Jun. 2012, pp. 81-84.
9. L. C. Yu, G. T. Dunne, K. S. Matocha, K. P. Cheung, J. S. Suehle, and K. Sheng, "Reliability issues of SiC MOSEFTs: A technology for high-temperature environments," IEEE Trans.Device Mater. Rel., vol. 10, no. 4, pp. 418-426, Dec. 2010.
10. J. D. Scofield, J. Richmond, and S. Leslie, "Performance and reliability characteristics of 1200 V, 100 A, 200 ?C half-bridge SiC MOFET-JBS diode power modules," in Proc. Int. Conf. High Temperature Electron., May 2010.
11. M. Treu, R. Rupp, and G. Solkner, "Reliability of SiC power device and its influence on their commercialization-review, status, and remaining issues," in Proc. IEEE Int Rel. Phys. Symp., 2010, pp. 156-161.
12. T. Okayama, S. D. Arthur, J. L. Garrett, and M. V. Rao, "Reliability of 4 H-SiC DMOSFETs evaluated by bias stressing," in Proc. 65th Annu. Device Res. Conf., 2007, pp. 121-122.
13. R. Singh, "Reliability and performance limitations in SiC power devices," Microelectron. Rel., vol. 46, pp. 713-730, 2006.
14. S. Dasgupta, R. J. Kaplar, M. J. Marinella, M. A. Smith, and S. Atcitty, "Analysis and prediction of stability in commercial, 1200V, 33 A, 4H-SiC MOSFETs," in Proc. IEEE Int. Rel. Phys. Symp., Apr. 2012, pp. 3D31-3D35.
15. E. Arnold and D. Alok, "Effect of interface states on electron transport in 4 H-SiC inversion layers," IEEE Trans. Electron. Devices, vol. 48, no. 9, pp. 1870-1877, Sep. 2001. (Pubitemid 32926692)
16. J. Campi, Y. Shi, Y. Luo, F. Yan, and J. H. Zhao, "Study of interface state density and effective oxide charge in post-metallization annealed SiO2-SiC structures," IEEE Trans. Electron. Devices, vol. 46, no. 3, pp. 511-519, Mar. 1999.
17. M. Roschke and F. Schwierz, "Electron mobility models for 4 H, 6 H, and 3 C SiC," IEEE Trans. Electron. Devices, vol. 48, no. 7, pp. 1442-1447, Jul. 2001.
18. K. Sheng, "Maximum junction temperatures of SiC power devices," IEEE Trans. Electron. Devices, vol. 56, no. 2, pp. 337-342, Feb. 2009.
19. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. K. Agarwal, B. A. Hull, and S. H. Ryu, "Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures," Semicon. Sci. Technol., vol. 24, p. 075011, 2009.
20. S. Chen, C. Cai, T. Wang, Q. Quo, and K. Sheng, "Cryogenic and high temperature performance of 4 H-SiC Power MOSFETs," in Proc. IEEE. Appl.Power Electron. Conf. Expo., 2013, to be published.
21. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. New York, NY, USA: Wiley, 2007.
22. R. A.Wood and T. E. Salem, "Evaluation of a 1200-V, 800-A All-SiC dual module," IEEE Trans. Power Electron., vol. 26, no. 9, pp. 2504-2511, Sep. 2011.
23. P. Ning, F. Wang, and K. D. Ngo, "High-Temperature SiC power module electrical evaluation procedure," IEEE Trans. Power Electron., vol. 26, no. 11, pp. 3079-3083, Nov. 2011.