Circuit design and experimental test of a high power IGBT non-destructive tester

Microelectronics Reliability

Volumn 52, Issue 11, 2012, Pages 2609-2616

  Ahmed, Ashraf ^a   Castellazzi, A ^b   Coulbeck, L ^c   Johnson, M C ^b  

^a Soongsil University   (South Korea)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c DYNEX SEMICONDUCTOR LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT DESIGNS; CURRENT RATING; DEVICE UNDER TEST; EXPERIMENTAL TEST; FAILURE DETECTION; GATE RESISTORS; HIGH STRESS; HIGH-POWER; MODES OF OPERATION; NON DESTRUCTIVE; OPERATING CONDITION; PROPER DESIGN; SPICE SIMULATIONS; TEST CONDITION; VOLTAGE COLLAPSE;

CIRCUIT OSCILLATIONS; COMPUTER SOFTWARE; INTEGRATED CIRCUIT MANUFACTURE; TRANSIENT ANALYSIS;

SPICE;

EID: 84867572603     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.002     Document Type: Article

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