Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices

8th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2011-ECCE Asia

Volumn , Issue , 2011, Pages 1464-1468

  Wei, Guannan ^a   Liang, Yung C ^a   Samudra, Ganesh S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

High voltage p n junction; SiC GaN diode simulation; WBG power semiconductor

Indexed keywords

AVALANCHE BREAKDOWN; CRITICAL FIELDS; HIGH-POWER SEMICONDUCTOR DEVICES; IONIZATION COEFFICIENT; MEDICI SIMULATIONS; MODEL PARAMETERS; P-N JUNCTION; PHOTOGENERATION; POWER SEMICONDUCTORS; REALISTIC SIMULATION; REVERSE CHARACTERISTICS; SIC/GAN DIODE SIMULATION; SIMULATION RESULT; SYNOPSYS; TRAP DENSITY; WIDE BAND GAP;

GALLIUM NITRIDE; IMPACT IONIZATION; POWER ELECTRONICS; SILICON CARBIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 80052100287     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICPE.2011.5944472     Document Type: Conference Paper

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