Instable mechanisms during unclamped operation of high power IGBT modules

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1363-1369

  Busatto, G ^a   Abbate, C ^a   Iannuzzo, F ^a   Cristofaro, P ^a  

^a UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE UNDER TEST; EXPERIMENTAL CHARACTERIZATION; EXPERIMENTAL SETUP; HIGH-POWER; NON DESTRUCTIVE; VOLTAGE RATINGS;

ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

ACTIVE FILTERS;

EID: 69249221298     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.07.026     Document Type: Article

References (12)

1. Heumann K., and Quenum M. Second breakdown and latch-up behavior of IGBTs. EPE 93 2 11 (1993) 301-305
2. Shen C.C., Hefner A., Berning D.W., and Bernstein J.B. Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions. IEEE Trans Indus Appl 36 N2 (2000) 614-624
3. Yamashita J, Haruguchi H, Hagino H. A Study on the IGBT's turn-off failure and inhomogeneous operation. In: Power semiconductor devices and IC's ISPSD94; June 1994. p. 45-50.
4. Huang S, Shenga K, Amaratunga GAJ, Udrea F, Waind P. An experimental and numerical investigation of IGBT blocking characteristics. In: Proc of IPEMC 2000, vol. 1; 2000. p. 407-11.
5. Busatto G., Fratelli L., and Vitale G.F. Reverse bias instabilities in bipolar power transistor with cellular layout. IEEE Trans Electron Dev 48 11 (2001) 2544-2550
6. Jody J, Giri N, Venkataramanan, Beihoff Bruce C. Investigation of parallel operation of IGBTs. In: Proc of IAS 2002, vol. 4; 2002. p. 2585-91.
7. Hagino Hiroyasu, Yamashita Jun'ichi, Uenishi Akio, Haruguchi Hideki. An experimental and numerical study on the forward biased SOA of IGBT's; 1996. p. 490-500.
8. Ogura T., Ninomiya H., Sugiyama K., and Inoue T. Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss high-voltage IGBTs. IEEE Trans Electron Dev (2004) 629-635
9. Oetjen J., et al. Current filamentation in bipolar power devices during dynamic avalanche breakdown. Solid State Electron 44 (2000) 117-120
10. Busatto G, Abbate C, Abbate B, Iannuzzo F. Non-destructive experimental investigation about RBSOA in high power IGBT modules. In: Proc of CIPS 2008, 11-13 March, 2008, Nuremberg, Germany.
11. Misawa T. Silicon transit time avalanche diode. In: Proc international electron devices meeting, vol. 11; 1965. p. 15.
12. Misawa T. Multiple uniform layer approximation in analysis of negative resistance in p-n junction in breakdown. IEEE Trans Electron Dev 14 12 (1967) 795-808