Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications

2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013

Volumn , Issue , 2013, Pages 385-391

  Santini, Thomas ^a   Sebastien, Morand ^a   Florent, Miller ^a   Phung, Luong Viet ^b   Allard, Bruno ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b Univ Claude Bernard Lyon1   (France)

Author keywords

Accelerated Aging Tests; Acceleration Factors; Gate Oxide; MOSFET; Reliability Assessment; Silicon Carbide

Indexed keywords

ACCELERATED AGING TEST; ACCELERATION FACTORS; GATE OXIDE; MOS-FET; RELIABILITY ASSESSMENTS;

ENERGY CONVERSION; EXHIBITIONS; GATES (TRANSISTOR); MOSFET DEVICES; RELIABILITY ANALYSIS; SILICON CARBIDE;

HIGH TEMPERATURE APPLICATIONS;

EID: 84883693449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE-Asia.2013.6579125     Document Type: Conference Paper

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