Investigation of ultralow leakage in MOS capacitors on 4H SiC

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1361-1365

  Cheong, Kuan Yew ^a,b   Dimitrijev, Sima ^a   Han, Jisheng ^a  

^a GRIFFITH UNIVERSITY   (Australia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDED GATE OXIDES; NONEQUILIBRIUM CAPACITANCE; NONVOLATILE MEMORIES; ULTRALOW LEAKAGE;

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC RELAXATION; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICON CARBIDE; THERMAL EFFECTS;

MOS CAPACITORS;

EID: 4444321870     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833966     Document Type: Article

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