Direct bandgap germanium-on-silicon inferred from 5.7% (100) uniaxial tensile strain 〈Invited〉

Photonics Research

Volumn 2, Issue 3, 2014, Pages A8-A13

  Sukhdeo, David S ^a   Nam, Donguk ^a   Kang, Ju Hyung ^a   Brongersma, Mark L ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Integrated optics materials; Laser materials

Indexed keywords

ENERGY GAP; SEMICONDUCTOR LASERS; WIRE;

BAND-GAP SEMICONDUCTORS; GERMANIUM ON SILICONS; GROUP-IV SEMICONDUCTORS; INTEGRATED OPTICS MATERIALS; LASER MATERIALS; THEORETICAL CALCULATIONS; THEORETICAL EFFICIENCIES; UNIAXIAL TENSILE STRAIN;

TENSILE STRAIN;

EID: 84919786107     PISSN: 23279125     EISSN: None     Source Type: Journal    
DOI: 10.1364/PRJ.2.0000A8     Document Type: Article

References (38)

1. K.-H. Koo, H. Cho, P. Kapur, and K. C. Saraswat, “Performance comparisons between carbon banotubes, optical, and Cu for future high-performance on-chip interconnect applications,” IEEE Trans. Electron Devices 54, 3206-3215 (2007).
2. D. A. B. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88, 728-749 (2000).
3. Y. Ishikawa and K. Wada, “Germanium for silicon photonics,” Thin Solid Films 518, S83-S87 (2010).
4. J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling, and J. Michel, “Ge-on-Si optoelectronics,” Thin Solid Films 520, 3354-3360 (2012).
5. J. Liu, L. C. Kimerling, and J. Michel, “Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration,” Semicond. Sci. Technol. 27, 094006 (2012).
6. P. Boucaud, M. El Kurdi, A. Ghrib, M. Prost, M. de Kersauson, S. Sauvage, F. Aniel, X. Checoury, G. Beaudoin, L. Largeau, I. Sagnes, G. Ndong, M. Chaigneau, and R. Ossikovski, “Recent advances in germanium emission,” Photon. Res. 1, 102-109 (2013).
7. C. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B 39, 1871-1883 (1989).
8. L. Vivien, J. Osmond, J.-M. Fedeli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, and S. Laval, “42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide,” Opt. Express 17, 6252-6257 (2009).
9. D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller, and K. Saraswat, “Strained germanium thin film membrane on silicon substrate for optoelectronics,” Opt. Express 19, 25866-25872 (2011).
10. J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4, 527-534 (2010).
11. J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Optical modulator on silicon employing germanium quantum wells,” Opt. Express 15, 5851-5859 (2007).
12. J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15, 11272-11277 (2007).
13. Y. Cai and R. Camacho-Aguilera, “High n-type doped germanium for electrically pumped Ge laser,” in Integrated Photonics Research, Silicon and Nanophotonics (IPRSN) (Optical Society of America, 2012), pp. 5-7.
14. Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, and J. Michel, “High phosphorous doped germanium: dopant diffusion and modeling,” J. Appl. Phys. 112, 034509 (2012).
15. M. El Kurdi, G. Fishman, S. Sauvage, and P. Boucaud, “Band structure and optical gain of tensile-strained germanium based on a 30 band k-p formalism,” J. Appl. Phys. 107, 013710 (2010).
16. G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, T. Schroeder, A. Ghrib, M. de Kersauson, M. El Kurdi, P. Boucaud, and B. Tillack, “Tensile strained Ge layers obtained via a Si-CMOS compatible approach,” in International Silicon-Germanium Technology and Device Meeting (ISTDM) (IEEE, 2012), pp. 1-2.
17. B. Dutt, D. S. Sukhdeo, D. Nam, B. M. Vulovic, Z. Yuan, and K. C. Saraswat, “Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping,” IEEE Photon. J. 4, 2002-2009 (2012).
18. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20, 11316-11320 (2012).
19. M. J. Suess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Analysis of enhanced light emission from highly strained germanium microbridges,” Nat. Photonics 7, 466-472 (2013).
20. J. R. Jain, D. Ly-Gagnon, and K. Balram, “Tensile-strained germa-nium-on-insulator substrate fabrication for silicon-compatible optoelectronics,” Opt. Mater. Express 1, 1121-1126 (2011).
21. J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87, 011110 (2005).
22. D. Nam, D. S. Sukhdeo, J.-H. Kang, J. Petykiewicz, J. H. Lee, W. S. Jung, J. Vuckovic, M. L. Brongersma, and K. C. Saraswat, “Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles,” Nano Lett. 13, 3118-3123 (2013).
23. A. K. Okyay, A. M. Nayfeh, T. Yonehara, A. Marshall, P. C. McIntyre, and K. C. Saraswat, “Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection,” in Conference on Lasers and Electro-Optics (CLEO), OSA Technical Digest (CD) (Optical Society of America, 2006), paper CTuU5.
24. T. Yi, L. Li, and C. Kim, “Microscale material testing of single crystalline silicon: process effects on surface morphology and tensile strength,” Sens. Actuators A 83, 172-178 (2000).
25. D. Nam, D. Sukhdeo, and S. Gupta, “Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser,” IEEE J. Sel. Top. Quantum Electron. 20, 1500107 (2013).
26. M. J. Süess, ETH Zürich (Private Communication, 2013).
27. D. S. Sukhdeo, D. Nam, J.-H. Kang, J. Petykiewicz, J. H. Lee, W. S. Jung, J. Vu, M. L. Brongersma, and K. C. Saraswat, “Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain,” in 2013 IEEE 10th International Conference on Group IV Photonics (GFP) (IEEE, 2013), Vol. 4, pp. 73-74.
28. C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys. 105, 083537 (2009).
29. S. A. Claussen, E. Tasyurek, J. E. Roth, and D. A. B. Miller, “Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells,” Opt. Express 18, 25596-25607 (2010).
30. S. L. Cheng, G. Shambat, J. Lu, H. Y. Yu, K. Saraswat, T. I. Kamins, J. Vuckovic, and Y. Nishi, “Cavity-enhanced directband electroluminesc ence near 1550 nm from germanium microdisk resonator diode on silicon,” Appl. Phys. Lett. 98, 211101(2011).
31. M. Schmid, M. Oehme, M. Gollhofer, R. Körner, M. Kaschel, E. Kasper, and J. Schulze, “Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes,” Thin Solid Films (in press).
32. M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, and P. Boucaud, “Direct and indirect band gap room temperature electroluminescence of Ge diodes,” J. Appl. Phys. 108, 023105 (2010).
33. P. Velha, K. Gallacher, D. Dumas, M. Myronov, D. Leadley, and D. Paul, “Direct band-gap electroluminescence from strained n-doped germanium diode,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optical Society of America, 2012), paper CW1L.7.
34. R. Camacho-Aguilera, J. Bessette, Y. Cai, L. C. Kimerling, and J. Michel, “Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers,” in 8th IEEE International Conference on Group IV Photonics (IEEE, 2011), pp. 190-192.
35. D. Nam, D. Sukhdeo, S.-L. Cheng, A. Roy, K. C.-Y. Huang, M. Brongersma, Y. Nishi, and K. Saraswat, “Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser,” Appl. Phys. Lett. 100, 131112 (2012).
36. R. Geiger, J. Frigerio, M. J. Suess, R. A. Minamisawa, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, “Excess carrier lifetimes in Ge layers on Si,” in IEEE International Conference on Group IV Photonics (IEEE, 2013), pp. 103-104.
37. D. S. Sukhdeo, H. Lin, D. Nam, Z. Yuan, B. M. Vulovic, S. Gupta, J. S. Harris, B. Dutt, and K. C. Saraswat, “Approaches for a viable germanium laser: tensile strain, GeSn alloys, and n-type doping,” in 2013 Optical Interconnects Conference (IEEE, 2013), pp. 112-113.
38. D. Sukhdeo, D. Nam, Z. Yuan, B. Dutt, and K. Saraswat, “Toward an efficient germanium-on-silicon laser: ultimate limits of tensile strain and n-type doping,” in Conference on Lasers and Electro-Optics (CLEO), OSA Technical Digest (online) (Optical Society of America, 2013), paper JTh2A.109.