Strained germanium thin film membrane on silicon substrate for optoelectronics

Optics Express

Volumn 19, Issue 27, 2011, Pages 25866-25872

  Nam, Donguk ^a   Sukhdeo, Devanand ^a   Roy, Arunanshu ^a   Balram, Krishna ^a   Cheng, Szu Lin ^b   Huang, Kevin Chih Yao ^a   Yuan, Ze ^a   Brongersma, Mark ^a   Nishi, Yoshio ^a   Miller, David ^a   Saraswat, Krishna ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GERMANIUM; SEMICONDUCTOR DOPING; STRAINED SILICON; SUBSTRATES;

BIAXIAL TENSILE STRAIN; DIRECT BAND GAP; HIGHLY STRAINED; INJECTED CARRIERS; LIGHT EMISSION EFFICIENCY; POPULATION INVERSIONS; SILICON SUBSTRATES; THIN FILM MEMBRANE;

TENSILE STRAIN;

GERMANIUM; SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; METHODOLOGY; OPTICAL INSTRUMENTATION; PHOTOMETRY; RADIATION EXPOSURE; SEMICONDUCTOR;

ELECTRONICS; EQUIPMENT DESIGN; GERMANIUM; LIGHT; MEMBRANES, ARTIFICIAL; OPTICAL DEVICES; PHOTOMETRY; SEMICONDUCTORS; SILICON;

EID: 84555202860     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.025866     Document Type: Article

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