Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Volumn , Issue , 2006, Pages

  Okyay, Ali K ^a   Nayfeh, Ammar M ^a   Saraswat, Krishna C ^a   Marshall, Ann ^a   McIntyre, Paul C ^a   Yonehara, Takao ^b  

^a Stanford University   (United States)

^b CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL QUANTUM EFFICIENCIES; HETERO EPITAXIES; HIGH EFFICIENCIES; MSM PHOTODETECTORS; NEAR INFRARED; REVERSE BIASES; REVERSE DARK CURRENTS;

DARK CURRENTS; ELECTRON OPTICS; EPITAXIAL GROWTH; GERMANIUM; LASERS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; QUANTUM ELECTRONICS; SILICON;

QUANTUM EFFICIENCY;

EID: 55649114913     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEO.2006.4628294     Document Type: Conference Paper

References (5)

1. S. Luryi, A. Kastalsky, and J. C. Bean, "New infrared detector on a silicon chip," IEEE Trans. Electron Devices, vol. ED-31, pp. 1135-1139, Sept 1984.
2. S. Fama, L. Colace, G. Masini, G. Assanto, H. C. Luan, "High performance germanium-on-silicon detectors for optical communications," App. Phys. Lett., vol. 81, no. 4, pp. 586-588, 2002.
3. L. Colace, G. Masini, G. Assanto, H. C. Luan, K. Wada, L. C. Kimerling, "Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates," App. Phys. Lett., vol. 76, no. 10, pp. 1231-1233, 2000.
4. A. Nayfeh, C. O. Chui, T. Yonehara and K. C. Saraswat, "A Method to Grow Heteroepitaxial-Ge on Si: Multiple Hydrogen Annealing for Heteroepitaxy (MHAH)," MRS Spring 2005 SanFransisco, CA.
5. V. Chu, J. P. Conde, D. S. Shen, and S.Wagner, "Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap," Appl. Phys. Lett., vol. 55, pp. 262-264, 1989.