High n-type doped germanium for electrically pumped Ge laser

Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2012

Volumn , Issue , 2012, Pages

  Cai, Yan ^a   Camacho Aguilera, Rodolfo ^a   Bessette, Jonathan T ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPING; ELECTRICALLY PUMPED; ENHANCED DIFFUSION; HIGH DOPING LEVEL; PHOSPHOROUS CONCENTRATIONS;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; GERMANIUM; NANOPHOTONICS; PHOTONICS; SILICON;

PUMPING (LASER);

EID: 84893105025     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Liu, J., et al., Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Optics Express, 2007. 15(18): p. 11272-11277.
2. Liu, J.F., et al., Ge-on-Si laser operating at room temperature. Optics Letters, 2010. 35(5): p. 679-681.
3. Sun, X.C., et al., Toward a Germanium Laser for Integrated Silicon Photonics. Ieee Journal of Selected Topics in Quantum Electronics, 2010. 16(1): p. 124-131.
4. Camacho-Aguilera, R.E., et al., High active carrier concentration in n-type, thin film Ge using delta-doping. Submitted for publication
5. Luan, H.-C., et al., High-quality Ge epilayers on Si with low threading-dislocation densities. Appl. Phys. Lett, 1999. 75(19): p. 2909-2911.
6. Sun, X., Ge-on-Si light-emitting materials and devices for silicon photonics, in Dept. of Materials Science and Engineering. 2009, Massachusetts Institute of Technology.
7. Cai, Y., et al., High n-type doped germanium: dopant in-diffusion and modeling. Submitted for publication.