Roadmap to an efficient germanium-on-silicon laser: Strain vs. n-type doping

IEEE Photonics Journal

Volumn 4, Issue 5, 2012, Pages 2002-2009

  Dutt, Birendra ^a,b   Sukhdeo, Devanand S ^a,c   Nam, Donguk ^c   Vulovic, Boris M ^a   Yuan, Ze ^c   Saraswat, Krishna C ^c  

^a APIC Corporation   (United States)

^b PhotonIC Corporation   (United States)

^c Stanford University   (United States)

Author keywords

diode lasers; infrared lasers; optoelectronic materials; Semiconductor lasers; semiconductor materials; theory and design

Indexed keywords

ELECTRICALLY PUMPED; GERMANIUM LASERS; GERMANIUM ON SILICONS; LOW POWER; N-TYPE DOPING; OPTIMAL DOPING; OPTOELECTRONIC MATERIALS; ROADMAP; SLOPE EFFICIENCIES; THRESHOLD REDUCTION;

GERMANIUM; INFRARED LASERS; OPTOELECTRONIC DEVICES; PUMPING (LASER); SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; TENSILE STRAIN;

SEMICONDUCTOR DOPING;

EID: 84867794605     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2012.2221692     Document Type: Article

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