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Volumn 7, Issue 6, 2013, Pages 466-472

Analysis of enhanced light emission from highly strained germanium microbridges

Author keywords

[No Author keywords available]

Indexed keywords

INJECTION DENSITY; MODEL CALCULATIONS; PHOTOLUMINESCENCE INTENSITIES; SILICON-ON-INSULATOR SUBSTRATES; THERMAL MISMATCH; TOP-DOWN FABRICATION; UNI-AXIAL STRAINS; UNIAXIAL TENSILE;

EID: 84878735631     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2013.67     Document Type: Article
Times cited : (416)

References (26)
  • 1
    • 33747557398 scopus 로고    scopus 로고
    • High-performance interconnects: An integration overview
    • Havemann, R. H. & Hutchby, J. A. High-performance interconnects: an integration overview. Proc. IEEE 89, 586-601 (2001).
    • (2001) Proc. IEEE , vol.89 , pp. 586-601
    • Havemann, R.H.1    Hutchby, J.A.2
  • 4
    • 77955206033 scopus 로고    scopus 로고
    • High-performance Ge-on-Si photodetectors
    • Michel, J., Liu, J. & Kimerling, L. C. High-performance Ge-on-Si photodetectors. Nature Photon. 4, 527-534 (2010).
    • (2010) Nature Photon. , vol.4 , pp. 527-534
    • Michel, J.1    Liu, J.2    Kimerling, L.C.3
  • 6
    • 77956356860 scopus 로고    scopus 로고
    • III-V/silicon photonics for on-chip and intra-chip optical interconnects
    • Roelkens, G. et al. III-V/silicon photonics for on-chip and intra-chip optical interconnects. Laser Photon. Rev. 4, 751-779 (2010).
    • (2010) Laser Photon. Rev. , vol.4 , pp. 751-779
    • Roelkens, G.1
  • 7
    • 33749380861 scopus 로고    scopus 로고
    • Electrically pumped hybrid AlGaInAs-silicon evanescent laser
    • Fang, A. W. et al. Electrically pumped hybrid AlGaInAs-silicon evanescent laser. Opt. Express 14, 9203-9210 (2006).
    • (2006) Opt. Express , vol.14 , pp. 9203-9210
    • Fang, A.W.1
  • 8
    • 34548402181 scopus 로고    scopus 로고
    • Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
    • Liu, J. et al. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt. Express 15, 11272-11277 (2007).
    • (2007) Opt. Express , vol.15 , pp. 11272-11277
    • Liu, J.1
  • 9
    • 19944433396 scopus 로고    scopus 로고
    • Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors
    • Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T. & Lochtefeld, A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors. J. Appl. Phys. 97, 011101 (2005).
    • (2005) J. Appl. Phys. , vol.97 , pp. 011101
    • Lee, M.L.1    Fitzgerald, E.A.2    Bulsara, M.T.3    Currie, M.T.4    Lochtefeld, A.5
  • 10
    • 65549130176 scopus 로고    scopus 로고
    • Prediction that uniaxial tension along 111 produces a direct band gap in germanium
    • Zhang, F., Crespi, V. H. & Zhang, P. Prediction that uniaxial tension along 111 produces a direct band gap in germanium. Phys. Rev. Lett. 102, 156401 (2009).
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 156401
    • Zhang, F.1    Crespi, V.H.2    Zhang, P.3
  • 11
    • 0000066922 scopus 로고
    • How to convert group-IV semiconductors into light emitters
    • Vogl, P., Rieger, M. M., Majewski, J. A. & Abstreiter, G. How to convert group-IV semiconductors into light emitters. Phys. Scr. T49, 476-482 (1993).
    • (1993) Phys. Scr. , vol.T49 , pp. 476-482
    • Vogl, P.1    Rieger, M.M.2    Majewski, J.A.3    Abstreiter, G.4
  • 12
    • 67650085428 scopus 로고    scopus 로고
    • Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
    • Niquet, Y. M., Rideau, D., Tavernier, C., Jaouen, H. & Blase, X. Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: application to silicon, germanium, and their alloys. Phys. Rev. B 79, 245201 (2009).
    • (2009) Phys. Rev. B , vol.79 , pp. 245201
    • Niquet, Y.M.1    Rideau, D.2    Tavernier, C.3    Jaouen, H.4    Blase, X.5
  • 13
    • 84858966360 scopus 로고    scopus 로고
    • Optimum strain configurations for carrier injection in near infrared Ge lasers
    • Aldaghri, O., Ikonic, Z. & Kelsall, R. W. Optimum strain configurations for carrier injection in near infrared Ge lasers. J. Appl. Phys. 111, 053106 (2012).
    • (2012) J. Appl. Phys. , vol.111 , pp. 053106
    • Aldaghri, O.1    Ikonic, Z.2    Kelsall, R.W.3
  • 15
    • 84861108534 scopus 로고    scopus 로고
    • An electrically pumped germanium laser
    • Camacho-Aguilera, R. E. et al. An electrically pumped germanium laser. Opt. Express 20, 11316-11320 (2012).
    • (2012) Opt. Express , vol.20 , pp. 11316-11320
    • Camacho-Aguilera, R.E.1
  • 16
    • 82755168822 scopus 로고    scopus 로고
    • Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
    • Sanchez-Perez, J. R. et al. Direct-bandgap light-emitting germanium in tensilely strained nanomembranes. Proc. Natl Acad. Sci. USA 108, 18893-18898 (2011).
    • (2011) Proc. Natl Acad. Sci. USA , vol.108 , pp. 18893-18898
    • Sanchez-Perez, J.R.1
  • 17
    • 84861809853 scopus 로고    scopus 로고
    • Control of tensile strain in germanium waveguides through silicon nitride layers
    • Ghrib, A. et al. Control of tensile strain in germanium waveguides through silicon nitride layers. Appl. Phys. Lett. 100, 201104 (2012).
    • (2012) Appl. Phys. Lett. , vol.100 , pp. 201104
    • Ghrib, A.1
  • 18
    • 84861666546 scopus 로고    scopus 로고
    • A micromachining-based technology for enhancing germanium light emission via tensile strain
    • Jain, J. R. et al. A micromachining-based technology for enhancing germanium light emission via tensile strain. Nature Photon. 6, 398-405 (2012).
    • (2012) Nature Photon. , vol.6 , pp. 398-405
    • Jain, J.R.1
  • 19
    • 0017905714 scopus 로고
    • On the ultimate yield strength of solids
    • Ruoff, A. L. On the ultimate yield strength of solids. J. Appl. Phys. 49, 197-200 (1978).
    • (1978) J. Appl. Phys. , vol.49 , pp. 197-200
    • Ruoff, A.L.1
  • 20
    • 84869390537 scopus 로고    scopus 로고
    • Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%
    • Minamisawa, R. A. et al. Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%. Nature Commun. 3, 1096 (2012).
    • (2012) Nature Commun. , vol.3 , pp. 1096
    • Minamisawa, R.A.1
  • 22
    • 33845197307 scopus 로고    scopus 로고
    • Strain-induced shift of phonon modes in Si1-xGex alloys
    • Pezzoli, F. et al. Strain-induced shift of phonon modes in Si1-xGex alloys. Mater. Sci. Semicond. Proc. 9, 541-545 (2006).
    • (2006) Mater. Sci. Semicond. Proc. , vol.9 , pp. 541-545
    • Pezzoli, F.1
  • 24
    • 41349092986 scopus 로고    scopus 로고
    • Nextnano: General purpose 3-D simulations
    • Birner, S. et al. Nextnano: general purpose 3-D simulations. IEEE Trans. Electron. Dev. 54, 2137-2142 (2007).
    • (2007) IEEE Trans. Electron. Dev. , vol.54 , pp. 2137-2142
    • Birner, S.1
  • 25
    • 84864467990 scopus 로고    scopus 로고
    • Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain
    • Carroll, L. et al. Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain. Phys. Rev. Lett. 109, 057402 (2012).
    • (2012) Phys. Rev. Lett. , vol.109 , pp. 057402
    • Carroll, L.1
  • 26
    • 2342624657 scopus 로고    scopus 로고
    • Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
    • Isella, G. et al. Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices. Solid State Electron. 48, 1317-1323 (2004).
    • (2004) Solid State Electron. , vol.48 , pp. 1317-1323
    • Isella, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.