Direct and indirect band gap room temperature electroluminescence of Ge diodes

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  De Kersauson, M ^a   Jakomin, R ^a   El Kurdi, M ^a   Beaudoin, G ^a   Zerounian, N ^a   Aniel, F ^a   Sauvage, S ^a   Sagnes, I ^a   Boucaud, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BAND GAP; ELECTRICALLY PUMPED; INDIRECT BAND GAP; INJECTED CURRENT; LIGHT EMITTERS; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL RESPONSE; PROMISING MATERIALS; ROOM TEMPERATURE;

DIODES; ELECTROLUMINESCENCE; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; TUNNEL DIODES;

ENERGY GAP;

EID: 77955827131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3462400     Document Type: Article

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