Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2011, Pages 190-192

  Camacho Aguilera, Rodolfo ^a   Bessette, Jonathan ^a   Cai, Yan ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY PUMPED; HETEROJUNCTION DIODES; PHOSPHORUS-DOPED; SELECTIVE GROWTH; SI INTEGRATED;

ELECTROLUMINESCENCE; GERMANIUM; HETEROJUNCTIONS; PHOSPHORUS; PHOTONICS; PUMPING (LASER); SEMICONDUCTOR DIODES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81355132397     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2011.6053759     Document Type: Conference Paper

References (11)

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4. Cannon, D.D., Strain Engineered CMOS compatible Ge photodetectors in Materials Science & Technology. 2004, Massachusetts Institute of Technology: Cambridge.
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10. Bessette J., C.-A.R., Cai Y., Kimerling L. C., Michel J. Optical characterization of Ge on Si laser gain media. in Submitted to IEEE Group Four Photonics 2011. 2011. London.
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