Direct band-gap electroluminescence from strained n-doped germanium diodes

CLEO: Science and Innovations, CLEO_SI 2012

Volumn , Issue , 2012, Pages

  Velha, Philippe ^a   Gallacher, Kevin ^a   Dumas, Derek ^a   Paul, Douglas J ^a   Myronov, Maksym ^b   Leadley, David R ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; DOPING (ADDITIVES); ELECTROLUMINESCENCE; GERMANIUM; SUBSTRATES;

AVERAGE POWER; CIRCULAR MESA; DIRECT BAND GAP; INTEGRATED SOURCES; LED STRUCTURE; ORDERS OF MAGNITUDE; SI SUBSTRATES; UNDOPED BUFFER;

ENERGY GAP;

EID: 84890761611     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/cleo_si.2012.cw1l.7     Document Type: Conference Paper

References (5)

1. M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian et al., J. Appl. Phys. 108, 023105 (2010)
2. X. Sun, J. Liu, L.C. Kimerling, J. Michel, Opt. Lett. 34, 1198 (2009)
3. S.-L. Cheng, G. Shambat, J. Lu, H.-Y. Yu, K. Saraswat, et al., Appl. Phys. Lett. 98, 211101 (2011)
4. S.L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, & Y. Nishi, Opt. Exp. 17, 10019 (2009)
5. V.A. Shah, A. Dobbie, M. Myronov and D.R. Leadley, Solid State Electron. 62, 189 (2011)