AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications

Materials Science in Semiconductor Processing

Volumn 29, Issue , 2015, Pages 231-237

  Mohd Yusoff, M Z ^a,b   Mahyuddin, A ^c   Hassan, Z ^b   Abu Hassan, H ^b   Abdullah, M J ^b   Rusop, M ^a   Mohammad, S M ^b   Ahmed, Naser M ^b  

^a UNIVERSITI TEKNOLOGI MARA   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

^c UNIVERSITI KUALA LUMPUR   (Malaysia)

Author keywords

AlN; III nitride; MBE; Silicon; XRD

Indexed keywords

ALUMINUM NITRIDE; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION;

HIGH-ANGLE ANNULAR DARK FIELDS; HIGH-RESOLUTION X-RAY DIFFRACTION; III-NITRIDE; METAL SEMICONDUCTOR METAL; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SELECTED AREA ELECTRON DIFFRACTION; STRUCTURAL AND OPTICAL PROPERTIES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84915767286     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2014.03.041     Document Type: Article

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