Effects of the polarization fields on the responsivity of the AlN/GaN photodetectors

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2005, Issue , 2005, Pages 281-283

  Zhou, J J ^a   Jiang, R L ^a   Ji, X L ^a   Wen, B ^a   Chen, P ^b   Chua, S J ^b   Zhang, R ^a   Shen, B ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; HALL EFFECT; INTERFACES (MATERIALS); MONOLAYERS; POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS;

ALN/GAN PHOTODETECTORS; HETEROSTRUCTURE; POLARIZATION FIELDS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

PHOTODETECTORS;

EID: 33746631763     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIM.2005.1511437     Document Type: Conference Paper

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