AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 159-162

  Pau, J L ^a   Monroy, E ^a   Sanchez Garcia M A ^a   Calleja, E ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

III Nitrides; Metal semiconductor metal; Molecular beam epitaxy; UV photodetectors

Indexed keywords

ENERGY GAP; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTODIODES; QUANTUM THEORY; SEMICONDUCTING SILICON; SUBSTRATES;

METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037198492     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00051-X     Document Type: Conference Paper

References (10)