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Volumn 60, Issue , 2013, Pages 500-507
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Plasma-assisted MBE growth of AlN/GaN/AlN heterostructures on Si (1 1 1) substrate
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Author keywords
AlN; EDS line analysis; MBE; TEM; XRD
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Indexed keywords
ALN;
ENERGY DISPERSIVE X RAY SPECTROSCOPY;
HIGH-RESOLUTION X-RAY DIFFRACTION;
LINE ANALYSIS;
MICROSTRUCTURE PROPERTIES;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
TRANSMISSION ELECTRON MICROSCOPY (TEM);
XRD;
CRYSTALLINE MATERIALS;
MOLECULAR BEAM EPITAXY;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SILICON;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
X RAY SPECTROSCOPY;
QUALITY CONTROL;
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EID: 84879299087
PISSN: 07496036
EISSN: 10963677
Source Type: Journal
DOI: 10.1016/j.spmi.2013.05.034 Document Type: Article |
Times cited : (15)
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References (23)
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