Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 470-475

  Yu, C L ^a   Chang, S J ^a   Chang, P C ^b   Lin, Y C ^a   Lee, C T ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Cap layer; LT AlN; UV photodetectors

Indexed keywords

ALUMINUM NITRIDE; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

CAP LAYERS; DARK CURRENT; ULTRAVIOLET SCHOTTKY BARRIER PHOTODETECTORS; UV PHOTODETECTORS;

ULTRAVIOLET DETECTORS;

EID: 33845218658     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.011     Document Type: Article

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