Molecular beam epitaxial growth of AlN single crystalline films on Si (111) using radio-frequency plasma assisted nitrogen radical source

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 4, 1998, Pages 2140-2147

  Yasutake, K ^a   Takeuchi, A ^a   Kakiuchi, H ^a   Yoshii, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032331539     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581321     Document Type: Article

References (23)

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