Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

Applied Physics Letters

Volumn 105, Issue 17, 2014, Pages

  Zhang, Y ^a   Shao, Y Y ^a   Lu, X B ^a   Zeng, M ^a   Zhang, Z ^a   Gao, X S ^a   Zhang, X J ^b   Liu, J M ^b   Dai, J Y ^c  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

^c HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING CHARACTERISTICS; DEFECT STATE; NON-VOLATILE MEMORY APPLICATION;

EID: 84908439442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4900745     Document Type: Article

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