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Journal of Physics D: Applied Physics

Volumn 45, Issue 18, 2012, Pages

Effects of high-temperature O 2 annealing on Al 2O 3 blocking layer and Al 2O 3/Si 3N 4 interface for MANOS structures

(5) Xu, Zhongguang a Zhu, Chenxin a Huo, Zongliang a Zhao, Shengjie a Liu, Ming a

a INSTITUTE OF MICROELECTRONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; ELECTRICAL CHARACTERISTIC; HIGH TEMPERATURE; INTERFACIAL LAYER; LOW-ENERGY PLASMA; OXYGEN INCORPORATION; POST DEPOSITION ANNEALING; PRE-TREATMENT; RETENTION IMPROVEMENT;

OXYGEN; PHOTOELECTRONS; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 84860132791 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/18/185103 Document Type: Article

Times cited : (11)

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