Improved memory characteristics of a novel TaN/Al2O 3/TiO2/HfO2/SiO2/Si structured charge trapping memory

Japanese Journal of Applied Physics

Volumn 52, Issue 4 PART 2, 2013, Pages

  Peng, Yahua ^a   Liu, Fei ^a   Liu, Xiaoyan ^a   Du, Gang ^a   Kang, Jinfeng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPROPRIATE DESIGNS; CHARGE TRAPPING LAYERS; CHARGE TRAPPING MEMORY; EXPERIMENT DATA; GATE DIELECTRIC LAYERS; NOVEL STRUCTURES; PROGRAM/ERASE SPEED; RETENTION CHARACTERISTICS;

GATE DIELECTRICS; HAFNIUM OXIDES; SILICON; SOLID STATE DEVICES; TITANIUM DIOXIDE;

CHARGE TRAPPING;

EID: 84880829457     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.04CD13     Document Type: Conference Paper

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