SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1573-1575

Charge-trapping MOS memory structure using anodic alumina charging medium

(2) Hourdakis, E a Nassiopoulou, A G a

a INSTITUTE OF MICROELECTRONICS (Greece)

Author keywords

Charge trapping memory; Porous anodic alumina

Indexed keywords

ANODIC ALUMINA; CHARGE TRAPPING MEMORIES; CHARGING/DISCHARGING; DIELECTRIC LAYER; GATE DIELECTRIC STACKS; HIGH-K DIELECTRIC; LOW COSTS; MEMORY STRUCTURE; MEMORY WINDOW; MOS STRUCTURE; POROUS ANODIC ALUMINA; POROUS ANODIC ALUMINUM OXIDES; TUNNEL OXIDES;

ALUMINUM SHEET; CHARGE TRAPPING; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); SILICON COMPOUNDS;

ANODIC OXIDATION;

EID: 79958024895 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.015 Document Type: Article

Times cited : (7)

References (20)

1
- 67349270310
- J.A. Kittl, K. Opsomer, M. Popovici, N. Menou, B. Kaczer, X.P. Wang, C. Adelmann, and M.A. Pawlak Microelectron. Eng. 86 2009 1789
- (2009) Microelectron. Eng. , vol.86 , pp. 1789
- Kittl, J.A.¹ Opsomer, K.² Popovici, M.³ Menou, N.⁴ Kaczer, B.⁵ Wang, X.P.⁶ Adelmann, C.⁷ Pawlak, M.A.⁸

2
- 67349235658
- G. Molas, M. Bocquet, E. Vianello, L. Perniola, H. Grampeix, J.P. Colonna, L. Masarotto, and F. Martin Microelectron. Eng. 86 2009 1796
- (2009) Microelectron. Eng. , vol.86 , pp. 1796
- Molas, G.¹ Bocquet, M.² Vianello, E.³ Perniola, L.⁴ Grampeix, H.⁵ Colonna, J.P.⁶ Masarotto, L.⁷ Martin, F.⁸

3
- 67650423946
- P.-H. Tsai, K.-S. Chang-Liao, T.-C. Liu, T.-K. Wang, P.-J. Tzeng, C.-H. Lin, L.S. Lee, and M.-J. Tsai IEEE Electron. Dev. Lett. 30 2009 775
- (2009) IEEE Electron. Dev. Lett. , vol.30 , pp. 775
- Tsai, P.-H.¹ Chang-Liao, K.-S.² Liu, T.-C.³ Wang, T.-K.⁴ Tzeng, P.-J.⁵ Lin, C.-H.⁶ Lee, L.S.⁷ Tsai, M.-J.⁸

4
- 43549087140
- S.I. Shim, F.C. Yeh, X.W. Wang, and T.P. Ma IEEE Electron. Dev. Lett. 29 2008 512
- (2008) IEEE Electron. Dev. Lett. , vol.29 , pp. 512
- Shim, S.I.¹ Yeh, F.C.² Wang, X.W.³ Ma, T.P.⁴

5
- 70549109097
- Y.-H. Wu, L.-L. Chen, Y.-S. Lin, M.-Y. Li, and H.-C. Wu IEEE Electron. Dev. Lett. 30 2009 1290
- (2009) IEEE Electron. Dev. Lett. , vol.30 , pp. 1290
- Wu, Y.-H.¹ Chen, L.-L.² Lin, Y.-S.³ Li, M.-Y.⁴ Wu, H.-C.⁵

6
- 77953555454
- J.K. Park, Y. Park, S.K. Lim, J.S. Oh, M.S. Joo, K. Hong, and B.J. Cho Appl. Phys. Lett. 96 2010 222902
- (2010) Appl. Phys. Lett. , vol.96 , pp. 222902
- Park, J.K.¹ Park, Y.² Lim, S.K.³ Oh, J.S.⁴ Joo, M.S.⁵ Hong, K.⁶ Cho, B.J.⁷

7
- 14844330746
- M. Specht, H. Reisinger, F. Hofmann, T. Schulz, E. Landgraf, R.J. Luyken, W. Rosner, M. Grieb, and L. Risch Solid-State Electron. 49 2005 716
- (2005) Solid-State Electron. , vol.49 , pp. 716
- Specht, M.¹ Reisinger, H.² Hofmann, F.³ Schulz, T.⁴ Landgraf, E.⁵ Luyken, R.J.⁶ Rosner, W.⁷ Grieb, M.⁸ Risch, L.⁹

8
- 28044445399
- B. Govoreanu, D.P. Brunco, and J. Van Houdt Solid-State Electron. 49 2005 1841
- (2005) Solid-State Electron. , vol.49 , pp. 1841
- Govoreanu, B.¹ Brunco, D.P.² Van Houdt, J.³

9
- 77949363529
- H.-W. You, and W.-J. Cho Appl. Phys. Lett. 96 2010 093506
- (2010) Appl. Phys. Lett. , vol.96 , pp. 093506
- You, H.-W.¹ Cho, W.-J.²

10
- 61349202777
- C.-H. Huang, E.-J. Li, W.-J. Chang, N.-F. Wang, C.-I. Hung, and M.-P. Houng Solid-State Electron. 53 2009 279
- (2009) Solid-State Electron. , vol.53 , pp. 279
- Huang, C.-H.¹ Li, E.-J.² Chang, W.-J.³ Wang, N.-F.⁴ Hung, C.-I.⁵ Houng, M.-P.⁶

11
- 77951790006
- T.-M. Pan, J.-S. Jung, and X.-C. Wu Appl. Phys. Lett. 96 2010 162901
- (2010) Appl. Phys. Lett. , vol.96 , pp. 162901
- Pan, T.-M.¹ Jung, J.-S.² Wu, X.-C.³

12
- 77954701725
- T.-M. Pan, J.-S. Jung, and F.-H. Chen Appl. Phys. Lett. 97 2010 012906
- (2010) Appl. Phys. Lett. , vol.97 , pp. 012906
- Pan, T.-M.¹ Jung, J.-S.² Chen, F.-H.³

13
- 33646185846
- M. Kokonou, A.G. Nassiopoulou, K.P. Giannakopoulos, A. Travlos, T. Stoica, and S. Kennou Nanotechnology 17 2006 2146
- (2006) Nanotechnology , vol.17 , pp. 2146
- Kokonou, M.¹ Nassiopoulou, A.G.² Giannakopoulos, K.P.³ Travlos, A.⁴ Stoica, T.⁵ Kennou, S.⁶

14
- 57349113751
- V. Gianneta, A.G. Nassiopoulou, C.A. Krontiras, and S.N. Georga Phys. Stat. Sol. C 5 2008 3686
- (2008) Phys. Stat. Sol. C , vol.5 , pp. 3686
- Gianneta, V.¹ Nassiopoulou, A.G.² Krontiras, C.A.³ Georga, S.N.⁴

15
- 67649910113
- V. Gianneta, M. Huffman, and A.G. Nassiopoulou Phys. Stat. Sol. A 206 2009 1309
- (2009) Phys. Stat. Sol. A , vol.206 , pp. 1309
- Gianneta, V.¹ Huffman, M.² Nassiopoulou, A.G.³

16
- 77957011795
- E. Hourdakis, and A.G. Nassiopoulou IEEE Trans. Electron. Dev. 57 2010 2679
- (2010) IEEE Trans. Electron. Dev. , vol.57 , pp. 2679
- Hourdakis, E.¹ Nassiopoulou, A.G.²

17
- 34447336164
- A.G. Nassiopoulou, and A. Salonidou J. Nanosci. Nanotechnol. 7 2007 368
- (2007) J. Nanosci. Nanotechnol. , vol.7 , pp. 368
- Nassiopoulou, A.G.¹ Salonidou, A.²

18
- 34147193604
- V. Turchanikov, A. Nazarov, V. Lysenko, E. Tsoi, A. Salonidou, and A.G. Nassiopoulou Physica E 38 2007 89
- (2007) Physica e , vol.38 , pp. 89
- Turchanikov, V.¹ Nazarov, A.² Lysenko, V.³ Tsoi, E.⁴ Salonidou, A.⁵ Nassiopoulou, A.G.⁶

19
- 70349307399
- V. Ioannou-Sougleridis, and A.G. Nassiopoulou J. Appl. Phys. 106 5 2009 54508
- (2009) J. Appl. Phys. , vol.106 , Issue.5 , pp. 54508
- Ioannou-Sougleridis, V.¹ Nassiopoulou, A.G.²

20
- 79958071413
- D. Liu, and J. Robertson Microelectron. Eng. 86 2009 1789
- (2009) Microelectron. Eng. , vol.86 , pp. 1789
- Liu, D.¹ Robertson, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.