Novel SONOS structure of nonvolatile memories with improved data retention

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1997, Pages 113-114

  Reisinger, H ^a   Franosch, M ^a   Hasler, B ^a   Boehm, T ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; SEMICONDUCTOR DOPING;

FOWLER NORDHEIM (FN) ELECTRON TUNNELING; SILICON GATE; SILICON OXIDE NITRIDE OXIDE SEMICONDUCTOR (SONOS);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030719602     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)