SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 8, 2003, Pages 5408-5410

Improved metal-oxide-nitride-oxide-silicon-type flash device with high-k dielectrics for blocking layer

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NITRIDES; SILICON COMPOUNDS; SPUTTER DEPOSITION;

BLOCKING LAYERS;

ALUMINUM COMPOUNDS;

EID: 0242303733 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1609650 Document Type: Article

Times cited : (47)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.