SCOPUS 정보 검색 플랫폼

Volumn 114, Issue 4, 2013, Pages

The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O 3 nanolaminate-based memory devices

(11) Lan, Xuexin a Ou, Xin a Cao, Yanqiang a Tang, Shiyu a Gong, Changjie a Xu, Bo a Xia, Yidong a Yin, Jiang a Li, Aidong a Yan, Feng a Liu, Zhiguo a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CAPACITANCE-VOLTAGE CURVE; CHARGE TRAPPING LAYERS; CHARGE TRAPPING MEMORY; LAMINATED STRUCTURES; RETENTION CHARACTERISTICS; RETENTION PROPERTIES; TRAPPING CAPABILITY;

ALUMINUM; CHARGE TRAPPING; HEAT TREATMENT;

HAFNIUM OXIDES;

EID: 84882381146 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4816463 Document Type: Article

Times cited : (64)

References (28)

1
- 59049093079
- 10.1016/j.mee.2008.10.008
- P. Chakraborty, S. S. Mahato, T. K. Maiti, M. K. Bera, C. Mahata, S. K. Samanta, A. Biswas, and C. K. Maiti, Microelectron. Eng. 86, 299 (2009). 10.1016/j.mee.2008.10.008
- (2009) Microelectron. Eng. , vol.86 , pp. 299
- Chakraborty, P.¹ Mahato, S.S.² Maiti, T.K.³ Bera, M.K.⁴ Mahata, C.⁵ Samanta, S.K.⁶ Biswas, A.⁷ Maiti, C.K.⁸

2
- 36849001927
- 10.1038/nnano.2007.380
- J. Lee, J. Cho, C. Lee, I. Kim, J. Park, Y. Kim, H. Shin, J. Lee, and F. Caruso, Nat. Nanotechnol. 2, 790 (2007). 10.1038/nnano.2007.380
- (2007) Nat. Nanotechnol. , vol.2 , pp. 790
- Lee, J.¹ Cho, J.² Lee, C.³ Kim, I.⁴ Park, J.⁵ Kim, Y.⁶ Shin, H.⁷ Lee, J.⁸ Caruso, F.⁹

3
- 35748969089
- 10.1038/nmat2014
- R. Chau, B. Doyle, S. Datta, J. Kavalieros, and K. Zhang, Nat. Mater. 6, 810 (2007). 10.1038/nmat2014
- (2007) Nat. Mater. , vol.6 , pp. 810
- Chau, R.¹ Doyle, B.² Datta, S.³ Kavalieros, J.⁴ Zhang, K.⁵

4
- 0034224349
- 10.1109/101.857747
- M. H. White, D. A. Adams, and J. Bu, IEEE Circuits Devices Mag. 16, 22 (2000). 10.1109/101.857747
- (2000) IEEE Circuits Devices Mag. , vol.16 , pp. 22
- White, M.H.¹ Adams, D.A.² Bu, J.³

5
- 0035148013
- J. Bu and M. H. White, Solid State Electron. 45, 113 (2001).
- (2001) Solid State Electron. , vol.45 , pp. 113
- Bu, J.¹ White, M.H.²

6
- 50349090073
- 10.1016/j.sse.2008.04.016
- A. Arreghini, N. Akil, F. Driussi, D. Esseni, L. Selmi, and M. J. van Duuren, Solid State Electron. 52, 1460 (2008). 10.1016/j.sse.2008.04.016
- (2008) Solid State Electron. , vol.52 , pp. 1460
- Arreghini, A.¹ Akil, N.² Driussi, F.³ Esseni, D.⁴ Selmi, L.⁵ Van Duuren, M.J.⁶

7
- 77949363529
- 10.1063/1.3337103
- H. You and W. Cho, Appl. Phys. Lett. 96, 093506 (2010). 10.1063/1.3337103
- (2010) Appl. Phys. Lett. , vol.96 , pp. 093506
- You, H.¹ Cho, W.²

8
- 84872058911
- 10.1063/1.4754830
- L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai, Appl. Phys. Lett. 101, 133503 (2012). 10.1063/1.4754830
- (2012) Appl. Phys. Lett. , vol.101 , pp. 133503
- Liu, L.¹ Xu, J.P.² Ji, F.³ Chen, J.X.⁴ Lai, P.T.⁵

9
- 34247578215
- 10.1007/s11664-006-0003-6
- S. Ding, M. Zhang, W. Chen, D. W. Zhang, and L. Wang, J. Electron. Mater. 36, 253 (2007). 10.1007/s11664-006-0003-6
- (2007) J. Electron. Mater. , vol.36 , pp. 253
- Ding, S.¹ Zhang, M.² Chen, W.³ Zhang, D.W.⁴ Wang, L.⁵

10
- 34547213271
- 10.1063/1.2756849
- W. Chen, W. Liu, M. Zhang, S. Ding, D. W. Zhang, and M. Li, Appl. Phys. Lett. 91, 022908 (2007). 10.1063/1.2756849
- (2007) Appl. Phys. Lett. , vol.91 , pp. 022908
- Chen, W.¹ Liu, W.² Zhang, M.³ Ding, S.⁴ Zhang, D.W.⁵ Li, M.⁶

11
- 75149187833
- 10.1143/JJAP.48.120215
- L. Chen, Y. Wu, J. Chiang, M. Hung, C. Chang, and P. Su, Jpn. J. Appl. Phys. 48, 120215 (2009). 10.1143/JJAP.48.120215
- (2009) Jpn. J. Appl. Phys. , vol.48 , pp. 120215
- Chen, L.¹ Wu, Y.² Chiang, J.³ Hung, M.⁴ Chang, C.⁵ Su, P.⁶

12
- 33746550356
- 10.1109/LED.2006.879026
- H. You, T. Hsu, F. Ko, J. Huang, W. Yang, and T. Lei, IEEE Electron Device Lett. 27, 653 (2006). 10.1109/LED.2006.879026
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 653
- You, H.¹ Hsu, T.² Ko, F.³ Huang, J.⁴ Yang, W.⁵ Lei, T.⁶

13
- 34547422784
- 10.1088/0268-1242/22/8/010
- S. Maikap, H. Y. Lee, T. Wang, P. Tzeng, C. C. Wang, L. S. Lee, K. C. Liu, J. Yang, and M. Tsai, Semicond. Sci. Technol. 22, 884 (2007). 10.1088/0268-1242/22/8/010
- (2007) Semicond. Sci. Technol. , vol.22 , pp. 884
- Maikap, S.¹ Lee, H.Y.² Wang, T.³ Tzeng, P.⁴ Wang, C.C.⁵ Lee, L.S.⁶ Liu, K.C.⁷ Yang, J.⁸ Tsai, M.⁹

14
- 79956019609
- 10.1063/1.1499223
- M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, H. J. Choi, S. W. Nam, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett. 81, 1071 (2002). 10.1063/1.1499223
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1071
- Cho, M.-H.¹ Roh, Y.S.² Whang, C.N.³ Jeong, K.⁴ Choi, H.J.⁵ Nam, S.W.⁶ Ko, D.-H.⁷ Lee, J.H.⁸ Lee, N.I.⁹ Fujihara, K.¹⁰

15
- 54249111065
- 10.1143/JJAP.47.1818
- S. Maikap, T. Wang, P. Tzeng, H. Lee, C. Lin, C. Wang, L. Lee, J. Yang, and M. Tsai, Jan. J. Appl. Phys. 47, 1818 (2008). 10.1143/JJAP.47.1818
- (2008) Jan. J. Appl. Phys. , vol.47 , pp. 1818
- Maikap, S.¹ Wang, T.² Tzeng, P.³ Lee, H.⁴ Lin, C.⁵ Wang, C.⁶ Lee, L.⁷ Yang, J.⁸ Tsai, M.⁹

16
- 0035872897
- 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

17
- 77958024079
- 10.1063/1.3496437
- Y. Zhou, J. Yin, H. Xu, Y. Xia, Z. Liu, A. Li, Y. Gong, L. Pu, F. Yan, and Y. Shi, Appl. Phys. Lett. 97, 143504 (2010). 10.1063/1.3496437
- (2010) Appl. Phys. Lett. , vol.97 , pp. 143504
- Zhou, Y.¹ Yin, J.² Xu, H.³ Xia, Y.⁴ Liu, Z.⁵ Li, A.⁶ Gong, Y.⁷ Pu, L.⁸ Yan, F.⁹ Shi, Y.¹⁰

18
- 20844441573
- 10.1063/1.1897431
- C. Lee, S. Hur, Y. Shin, J. Choi, D. Park, and K. Kim, Appl. Phys. Lett. 86, 152908 (2005). 10.1063/1.1897431
- (2005) Appl. Phys. Lett. , vol.86 , pp. 152908
- Lee, C.¹ Hur, S.² Shin, Y.³ Choi, J.⁴ Park, D.⁵ Kim, K.⁶

19
- 78650743422
- 10.1063/1.3531559
- C. Zhu, Z. Huo, Z. Xu, M. Zhang, Q. Wang, J. Liu, S. Long, and M. Liu, Appl. Phys. Lett. 97, 253503 (2010). 10.1063/1.3531559
- (2010) Appl. Phys. Lett. , vol.97 , pp. 253503
- Zhu, C.¹ Huo, Z.² Xu, Z.³ Zhang, M.⁴ Wang, Q.⁵ Liu, J.⁶ Long, S.⁷ Liu, M.⁸

20
- 31544434017
- 10.1063/1.2168227
- S. Ding, M. Zhang, W. Chen, D. W. Zhang, L. Wang, X. P. Wang, C. Zhu, and M. Li, Appl. Phys. Lett. 88, 042905 (2006). 10.1063/1.2168227
- (2006) Appl. Phys. Lett. , vol.88 , pp. 042905
- Ding, S.¹ Zhang, M.² Chen, W.³ Zhang, D.W.⁴ Wang, L.⁵ Wang, X.P.⁶ Zhu, C.⁷ Li, M.⁸

21
- 84871370766
- 10.1016/j.matlet.2012.10.024
- Z. Tang, X. Zhu, H. Xu, Y. Xia, J. Yin, Z. Liu, A. Li, and F. Yan, Mater. Lett. 92, 21 (2013). 10.1016/j.matlet.2012.10.024
- (2013) Mater. Lett. , vol.92 , pp. 21
- Tang, Z.¹ Zhu, X.² Xu, H.³ Xia, Y.⁴ Yin, J.⁵ Liu, Z.⁶ Li, A.⁷ Yan, F.⁸

22
- 77951213078
- 10.1088/0268-1242/25/5/055012
- Y. Gong, A. Li, X. Li, H. Li, H. Zhai, and D. Wu, Semicond. Sci. Technol. 25, 055012 (2010). 10.1088/0268-1242/25/5/055012
- (2010) Semicond. Sci. Technol. , vol.25 , pp. 055012
- Gong, Y.¹ Li, A.² Li, X.³ Li, H.⁴ Zhai, H.⁵ Wu, D.⁶

23
- 33748113122
- 10.1109/TDMR.2006.876971
- R. G. Southwick and W. B. Knowlton, IEEE Trans. Device Mater. Res. 6, 136 (2006). 10.1109/TDMR.2006.876971
- (2006) IEEE Trans. Device Mater. Res. , vol.6 , pp. 136
- Southwick, R.G.¹ Knowlton, W.B.²

24
- 0004005306
- (John Wiley Sons, New York).
- S. M. Szu and K. K. Ng, Physics of Semiconductor Devices (John Wiley Sons, New York, 2007).
- (2007) Physics of Semiconductor Devices
- Szu, S.M.¹ Ng, K.K.²

25
- 0001681343
- 10.1063/1.366976
- H. Y. Yang, H. Niimi, and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998). 10.1063/1.366976
- (1998) J. Appl. Phys. , vol.83 , pp. 2327
- Yang, H.Y.¹ Niimi, H.² Lucovsky, G.³

26
- 0001182140
- 10.1063/1.368346
- Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto, J. Appl. Phys. 84, 2358 (1998). 10.1063/1.368346
- (1998) J. Appl. Phys. , vol.84 , pp. 2358
- Shi, Y.¹ Saito, K.² Ishikuro, H.³ Hiramoto, T.⁴

27
- 84857248252
- 10.1143/APEX.5.021102
- S. Spiga, F. Driussi, A. Lamperti, G. Congedo, and O. Salicio, Appl. Phys. Express 5, 021102 (2012). 10.1143/APEX.5.021102
- (2012) Appl. Phys. Express , vol.5 , pp. 021102
- Spiga, S.¹ Driussi, F.² Lamperti, A.³ Congedo, G.⁴ Salicio, O.⁵

28
- 67650708824
- 10.1063/1.3109206
- Z. F. Hou, X. G. Gong, and Q. Li, J. Appl. Phys. 106, 014104 (2009). 10.1063/1.3109206
- (2009) J. Appl. Phys. , vol.106 , pp. 014104
- Hou, Z.F.¹ Gong, X.G.² Li, Q.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.