Nitrided tetragonal ZrO2 as the charge-trapping layer for nonvolatile memory application

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1290-1292

  Wu, Yung Hsien ^a   Chen, Lun Lun ^a   Lin, Yuan Sheng ^a   Li, Ming Yen ^b   Wu, Hsiao Che ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b ProMOS Technologies Inc   (Taiwan)

Author keywords

Charge trapping layer; Grain boundary; NH 3 nitridation; Nonvolatile memory; Tetragonal ZrO2

Indexed keywords

CHARGE LOSS; CRYSTALLINE DIELECTRIC; FLAT-BAND VOLTAGE SHIFT; FULLY COMPATIBLE; MEMORY PERFORMANCE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONVOLATILE MEMORY; OPERATION SPEED; RETENTION CHARACTERISTICS; TRAPPING SITES;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NITRIDATION; PERMITTIVITY; ZIRCONIUM ALLOYS;

CHARGE TRAPPING;

EID: 70549109097     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034115     Document Type: Article

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